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參數(shù)資料
| 型號： | KAB04D100M-TLGP |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Multi-Chip Package MEMORY |
| 中文描述： | 多芯片封裝存儲器 |
| 文件頁數(shù)： | 43/72頁 |
| 文件大?。?/td> | 1378K |
| 代理商： | KAB04D100M-TLGP |
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KAB0xD100M - TxGP
Revision 1.11
August 2003
- 43 -
MCP MEMORY
SEC Only
ABSOLUTE MAXIMUM RATINGS
NOTE:
1. Minimum DC voltage is -0.2V on input/output balls. During transitions, this level may undershoot to -1.0V for periods <20ns.
Maximum DC voltage on input/output balls is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+1.0V for periods <20ns.
2. Minimum DC voltage is -0.2V on Reset and WP/ACC balls. During transitions, this level may undershoot to -1.0V for periods <20ns.
Maximum DC voltage on on Reset and WP/ACC balls is 12.5V which, during transitions, may overshoot to 14.0V for periods <20ns.
3. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
Vcc
Vcc
R
,Vcc
F
,Vcc
U
,VccQ
U
-0.2 to Vcc+0.3
V
RESET
V
IN
-0.2 to 12.5V
WP/ACC
-0.2 to 12.5V
Other Balls
-0.2 to 3.6V
Temperature Under Bias
T
BIAS
-40 to + 125
°
C
Storage Temperature
T
STG
-65 to + 150
Operating Temperature
T
A
-25 to + 85
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to Vss, T
A
=-25 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
Vcc
R
,Vcc
F
,Vcc
U
,VccQ
U
V
SS
2.7
2.9
3.1
V
Supply Voltage
0
0
0
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input LeaKAge Current
I
LI
V
IN
=Vss to Vcc, Vcc=Vcc
max
-10
10
μ
A
μ
A
Output LeaKAge Current
I
LO
V
OUT
=Vss to Vcc, Vcc=Vcc
max,
OE=V
IH
-10
10
Input Low Voltage Level
V
IL
-0.3
0.5
V
Input High Voltage Level
V
IH
2.2
Vcc+0.3
Output Low Voltage Level
V
OL
I
OL
= 2.1mA, Vcc = Vcc
min
-
0.4
Output High Voltage Level
V
OH
I
OH
= -1.0mA, Vcc = Vcc
min
2.3
-
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| KAB04D100M-TNGP | Multi-Chip Package MEMORY |
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| KAB02D100M-TLGP | Tantalum Conformal-Coated Capacitor; Capacitance: 22uF; Voltage: 10V; Packaging: Tape & Reel |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KAB04D100M-TNGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
| KAB-1 | 功能描述:保險絲 TRON RECTIFIER FUSE RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485 |
| KAB-1/2 | 制造商:COOPER BUSSMANN 功能描述:TRON RECTIFIER FUSE |
| KAB-10 | 功能描述:保險絲 10A RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485 |
| KAB-100 | 制造商:Cooper Bussmann 功能描述: |
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