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參數(shù)資料
| 型號(hào)： | KAB01D100M-TNGP |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁(yè)數(shù)： | 69/72頁(yè) |
| 文件大?。?/td> | 1378K |
| 代理商： | KAB01D100M-TNGP |
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KAB0xD100M - TxGP
Revision 1.11
August 2003
- 69 -
MCP MEMORY
SEC Only
TIMING WAVEFORM OF POWER UP(1)
(POWER UP(1))
1. After Vcc
U
reaches Vcc
U
(Min.)
following power application, wait 200
μ
s with CS
U
high and then toggle CS
U
low and commit Read Oper-
ation at least twice. Then you get into the normal operation.
2. Read operation should be executed by toggling CS
U
pin low.
3. The read operation must satisfy the specified tRC.
4. ZZ pin should be kept high during whole power up sequence.
(POWER UP(2))
1. After Vcc
U
reaches Vcc
U
(Min.)
following power application, wait 200
μ
s and wait another 300
μ
s with CS
U
high if you don’t want to com-
mit dummy read cycle. After total 500
μ
s wait, toggle CS
U
low, then you get into the normal mode.
2. ZZ pin should be kept high during whole power up sequence.
200
μ
s
≈
Read Operation Twice
Vcc
U
ZZ
CS
U
Vcc
U
(Min)
200
μ
s
≈
Vcc
U
ZZ
CS
U
300
μ
s
≈
Vcc
U
(Min)
TIMING WAVEFORM OF POWER UP(2)
(No Dummy Cycle)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KAB02D100M-TNGP | CONNECTOR ACCESSORY |
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| KAB3403T | White LED Step-Up Converter |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KAB02D100M-TLGP | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
| KAB02D100M-TNGP | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
| KAB03D100M-TLGP | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
| KAB03D100M-TNGP | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
| KAB04D100M-TLGP | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
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