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參數(shù)資料
| 型號(hào)： | KAB01D100M-TNGP |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 36/72頁 |
| 文件大?。?/td> | 1378K |
| 代理商： | KAB01D100M-TNGP |
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KAB0xD100M - TxGP
Revision 1.11
August 2003
- 36 -
MCP MEMORY
SEC Only
READY/BUSY
The device has a R/B
F
output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B
F
pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B
F
outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B
F
)
and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 20). Its value can
be determined by the following guidance.
Vcc
R
R/B
F
open drain output
Device
GND
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp
t
I
Rp(ohm)
Ibusy
tr
Rp value guidance
Rp(max) is determined by maximum permissible limit of tr
ibusy
Rp =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
2.7V
8mA
+
Σ
I
L
Busy
Ready Vcc
@ Vcc = 3.3V, Ta = 25
°
C , C
L
= 100pF
2.0V
tf
tr
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
96
tf
189
290
381
4.2
4.2
4.2
4.2
3.3
1.65
1.1
0.825
0.8V
Figure 20. Rp vs tr ,tf & Rp vs ibusy
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| KAB02D100M-TLGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
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| KAB03D100M-TNGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
| KAB04D100M-TLGP | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY |
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