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| 型號： | KAB01D100M-TNGP |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 44/72頁 |
| 文件大小： | 1378K |
| 代理商： | KAB01D100M-TNGP |
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KAB0xD100M - TxGP
Revision 1.11
August 2003
- 44 -
MCP MEMORY
SEC Only
DC AND OPERATING CHARACTERISTICS
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component(at 5 MHz).
The read current is typically 14 mA (@ Vcc
R
=2.9V , OE at V
IH
.)
2. I
CC
active during Internal Routine(program or erase) is in progress.
3. I
CC
active during Read while Write is in progress.
4. The high voltage ( V
HH
or V
ID
) must be used in the range of Vcc
R
= 2.9V
±
0.2V
5. Not 100% tested.
6. Typical values are measured at Vcc = 2.9V, Ta=25
°
C, not 100% tested.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
NOR
Flash
RESET Input Leakage Current
I
LIT
Vcc
R
=Vcc
R
max,
RESET=12.5V
-
-
35
μ
A
WP/ACC Input Leakage Current
I
LIW
Vcc
R
=Vcc
R
max,
WP/ACC=12.5V
-
-
35
μ
A
Active Read Current (1)
I
CC
1
CE
R
=V
IL
, OE=V
IH
5MHz
-
14
20
mA
1MHz
-
3
6
Active Write Current (2)
I
CC
2
CE
R
=V
IL
, OE=V
IH
-
15
30
mA
Read While Program Current (3)
I
CC
3
CE
R
=V
IL
, OE=V
IH
-
25
50
mA
Read While Erase Current (3)
I
CC
4
CE
R
=V
IL
, OE=V
IH
-
25
50
mA
Program While Erase Suspend
Current
I
CC
5
CE
R
=V
IL
, OE=V
IH
-
15
35
mA
ACC Accelerated Program
Current
I
ACC
CE
R
=V
IL
, OE=V
IH
ACC Ball
-
5
10
mA
Vcc
R
Ball
-
15
30
mA
Standby Current
I
SB
1
Vcc
R
=Vcc
R
max, CE
R
=Vcc
R
±
0.3V,
RESET=Vcc
R
±
0.3V,
WP/ACC=Vcc
R
±
0.3V or Vss
±
0.3V
Vcc
R
=Vcc
R
max
, RESET=Vss
±
0.3V,
WP/ACC=Vcc
R
±
0.3V or Vss
±
0.3V
-
10
30
μ
A
Standby Curren During Reset
I
SB
2
-
10
30
μ
A
Automatic Sleep Mode
I
SB
3
V
IH
=Vcc
R
±
0.3V, V
IL
=Vss
±
0.3V,
OE=V
IL
, I
OL
=I
OH
=0
-
10
30
μ
A
Voltage for WP/ACC Block
Temporarily Unprotect and
Program Acceleration (4)
V
HH
Vcc
R
= 2.9V
±
0.2V
8.5
-
12.5
V
Voltage for Autoselect and
Block Protect (4)
V
ID
Vcc
R
= 2.9V
±
0.2V
8.5
-
12.5
V
Low Vcc
R
Lock-out Voltage (5)
V
LKO
1.8
-
2.5
V
NAND
Flash
Active Sequential Read Currnt
I
CC
1f
tRC=50ns,CE
F
=V
IL
, I
OUT
=0mA,
Vcc
F
=Vcc
F
max
-
10
20
mA
Active Program Current
I
CC
2f
Vcc
F
=Vcc
F
max
-
10
20
mA
Active Erase Current
I
CC
3f
Vcc
F
=Vcc
F
max
-
10
20
mA
Stand_by Current(CMOS)
I
SB
2f
CE
F
=Vcc
F
, WP=0V/Vcc
F
-
10
50
μ
A
U
t
RAM
Operating Current
I
CC
1u
Cycle time=1
μ
s, 100% duty,
I
IO
=0mA, CS
U
≤
0.2V, ZZ
≥
VccQ
U
-0.2V,
V
IN
≤
0.2V or V
IN
≥
VccQ
U
-0.2V
-
4
7
mA
I
CC
2u
Cycle time=min, 100% duty, I
IO
=0mA,
CS
U
=VIL, ZZ=V
IH
, V
IN
=V
IL
or V
IH
-
30
35
mA
Stand_by Current(CMOS)
I
SB
2u
CSu
≥
VccQ
U
-0.2V, ZZ
≥
VccQ
U
-0.2V,
Other inputs =0~VccQ
U
-
80
100
μ
A
Deep Power Down
I
SBD
ZZ
≤
0.2V, Other input =0~VccQ
U
-
5
10
μ
A
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