參數(shù)資料
型號： KAB01D100M-TNGP
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： CONNECTOR ACCESSORY
中文描述： 連接器附件
文件頁數(shù)： 41/72頁
文件大小： 1378K
代理商： KAB01D100M-TNGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 41 -
MCP MEMORY
SEC Only
Samsung NAND Flash(x16) has two address pointer commands as a substitute for the two most significant column addresses. ’00h’
command sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these com-
mands, the starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address
pointer command is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’
command is written. A complete read operation prior to ’80h’ command is not necessary.
00h
(1) Command input sequence for programming ’A’ area
Address / Data input
80h
10h
00h
80h
10h
Address / Data input
The address pointer is set to ’A’ area(0~255), and sustained
50h
(2) Command input sequence for programming ’B’ area
Address / Data input
80h
10h
50h
80h
10h
Address / Data input
Only ’B’ area can be programmed.
’50h’ command can be omitted.
The address pointer is set to ’B’ area(256~263), and sustained
’00h’ command can be omitted.
It depends on how many data are inputted.
’A’,’B’ area can be programmed.
Pointer Operation of NAND Flash
Table 18. Destination of the pointer
Command
Pointer position
Area
00h
50h
0 ~ 255 word
256 ~ 263 word
main array(A)
spare array(B)
"A" area
(00h plane)
256 Word
"B" area
(50h plane)
8 Word
"A"
"B"
Internal
Page Register
Pointer select
commnad
(00h, 50h)
Pointer
Figure 26. Block Diagram of Pointer Operation
NAND Flash Technical Notes
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