參數(shù)資料
型號(hào)： KAB01D100M-TNGP
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： CONNECTOR ACCESSORY
中文描述： 連接器附件
文件頁(yè)數(shù)： 21/72頁(yè)
文件大?。?/td> 1378K
代理商： KAB01D100M-TNGP
KAB0xD100M - TxGP
Revision 1.11
August 2003
- 21 -
MCP MEMORY
SEC Only
Read While Write
The NOR Flash memory provides dual bank memory architecture that divides the memory array into two banks. The device is capa-
ble of reading data from one bank and writing data to the other bank simultaneously. This is so called the Read While Write operation
with dual bank architecture; this feature provides the capability of executing the read operation during Program/Erase or Erase-Sus-
pend-Program operation.
The Read While Write operation is prohibited during the chip erase operation. It is also allowed during erase operation when either
single block or multiple blocks from same bank are loaded to be erased. It means that the Read While Write operation is prohibited
when blocks from Bank1 and another blocks from Bank2 are loaded all together for the multi-block erase operation.
Block Group Protection & Unprotection
The NOR Flash memory feature hardware block group protection. This feature will disable both program and erase operations in any
combination of forty one block groups of memory. Please refer to Tables 12 and 13. The block group protection feature is enabled
using programming equipment at the user’s site. The device is shipped with all block groups unprotected.
This feature can be hardware protected or unprotected. If a block is protected, program or erase command in the protected block will
be ignored by the device. The protected block can only be read. This is useful method to preserve an important program data. The
block group unprotection allows the protected blocks to be erased or programed. All blocks must be protected before unprotect oper-
ation is executing. The block protection and unprotection can be implemented by the following method.
Table 11. Block Group Protection & Unprotection
Operation
CE
R
OE
WE
BYTE
A9
A6
A1
A0
DQ15/
A-1
DQ8/
DQ14
DQ0/
DQ7
RESET
Block Group Protect
L
H
L
X
X
L
H
L
X
X
D
IN
V
ID
Block Group Unprotect
L
H
L
X
X
H
H
L
X
X
D
IN
V
ID
Address must be inputted to the block group address (A12~A21) during block group protection operation. Please refer to Figure 10
(Algorithm) and Switching Waveforms of Block Group Protect & Unprotect Operations.
Temporary Block Group Unprotect
The protected blocks of the NOR Flash memory can be temporarily unprotected by applying high voltage (V
ID
= 8.5V ~ 12.5V) to the
RESET ball. In this mode, previously protected blocks can be programmed or erased with the program or erase command routines.
When the RESET ball goes high (RESET = V
IH
), all the previously protected blocks will be protected again. If the WP/ACC ball is
asserted at V
IL
, the two outermost boot blocks remain protected.
RESET
Program & Erase operation
at Protected Block
V
ID
V = V
IH
or V
IL
CE
R
WE
Figure 9. Temporary Block Group Unprotect Sequence
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