參數(shù)資料
型號(hào): K4N26323AE-GC20
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Mbit GDDR2 SDRAM
中文描述: 128Mbit GDDR2 SDRAM的
文件頁(yè)數(shù): 41/52頁(yè)
文件大?。?/td> 826K
代理商: K4N26323AE-GC20
- 41 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The 30 ohm@ODT 60 ohm Fix variation in driver pulldown current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines the of the V-I curve of Figure a.
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 30 ohm@ODT 60 ohm Fix variation pullup current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figrue b.
5. The 30 ohm@ODT 60 ohm fix variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for
device drain to source voltage from 0 to VDDQ/2
6. The 30 ohm@ODT 60 ohm fix variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain
to source voltages from 0 to VDDQ/2
30 ohm Driver @ ODT 60 ohm Fix.
Maximum
Typical
Minumum
Vout(V)
I
Minimum
Typical
Maximum
I
Figure b : PulluP Charateristics
Figure a : Pulldown Charateristics
Vout(V)
-20
-10
0
10
20
30
40
50
60
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
-60
-50
-40
-30
-20
-10
0
10
20
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
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