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參數(shù)資料
| 型號： | K4N26323AE-GC20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit GDDR2 SDRAM |
| 中文描述： | 128Mbit GDDR2 SDRAM的 |
| 文件頁數(shù)： | 23/52頁 |
| 文件大小： | 826K |
| 代理商： | K4N26323AE-GC20 |
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- 23 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Burst Read with Auto Precharge Followed by Same Bank Activation :
RL = 8 (AL = 1, CL = 7, internal t
RP
= 8)
0
CMD
NOP
NOP
NOP
NOP
NOP
DQ’s
NOP
CK, CK
3
7
8
9
10
11
READ A
Post CAS
RL = 8
DQS
> = t
RP
A8 = 1
NOP
12
Bank A
NOP
Auto Precharge Begins
DOUTA
0
Burst Read with Auto Precharge (AL=0)
*When AL(Additive Latency) is 1, a precharge command for same bank can be issued at 3th cycle only and others are same with
AL=0.
Asserted
command
For same bank
For different bank
1
2
3
4
1
2
3
4
READ
Illegal
Legal
Illegal
Illegal
Illegal
Legal
Legal
Legal
READ with Auto Precharge
Illegal
Legal
Illegal
Illegal
Illegal
Legal
Legal
Legal
Active
Illegal
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Precharge
Illegal
Legal
Illegal
Illegal
Legal
Legal
Legal
Legal
Burst Read with Auto Precharge
If A8 is high when a Read Command is issued, the Read with Auto-Precharge function is engaged. The GDDR2
SDRAM starts an Auto Precharge operation on the rising edge which is (AL + BL/2)cycles later from the read with Auto
Precharge command, when tRAS(min) is satisfied. If tRAS(min) is not satisfied at the edge, the start point of Auto Pre-
charge operation will be delayed until tRAS(min) is satisfied. A new bank active command may be issued to the same
bank if the following two conditions are satisfied simultaneously.
(1) The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
When the Read with Auto-Precharge command is issued, new command (Read, Read with Auto Precharge or pre-
charge) of same bank can be asserted tCCD=2 clock cycles later.
DOUTA
1
DOUTA
2
DOUTA
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4N26323AE-GC22 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM |
| K4N26323AE-GC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM |
| K4N27 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
| K4N28 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
| K4N29 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
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