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參數(shù)資料
| 型號： | K4N26323AE-GC20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit GDDR2 SDRAM |
| 中文描述： | 128Mbit GDDR2 SDRAM的 |
| 文件頁數(shù)： | 32/52頁 |
| 文件大?。?/td> | 826K |
| 代理商： | K4N26323AE-GC20 |
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- 32 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
POWER & DC OPERATING CONDITIONS(SSTL_18 In/Out)
Recommended operating conditions (Voltage referenced to V
SS
=0V, T
j
=0 to 100
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Device Supply voltage
V
DD
2.4
2.5
2.6
V
1
Output Supply voltage
V
DDQ
1.7
1.8
1.9
V
1
Reference voltage
V
REF
0.49*V
DDQ
-
0.51*V
DDQ
V
2
DC Input logic high voltage
V
IH (DC)
V
REF
+0.125
-
V
DDQ
+0.30
V
4
DC Input logic low voltage
V
IL (DC)
-0.30
-
V
REF
-0.125
V
5
AC Input logic high voltage
V
IH(AC)
V
REF
+0.25
-
-
V
AC Input logic low voltage
V
IL(AC)
-
-
V
REF
-0.25
V
Output logic high voltage
V
OH
Vtt+0.4
-
-
V
6
Output logic low voltage
V
OL
-
-
Vtt-0.4
V
6
Input leakage current
I
IL
-5
-
5
uA
7
Output leakage current
I
OL
-5
-
5
uA
7
1. Under all conditions V
DDQ
must be less than or equal to V
DD
.
2. V
REF
is expected to equal 0.50*V
DDQ
of the transmitting device and to track variations in the DC level of the same. Peak to
peak noise on the V
REF
may not exceed + 2% of the DC value. Thus, from 0.50*V
DDQ
, V
REF
is allowed +
25mV for DC error
and an additional +
25mV for AC noise.
3. V
tt
of the transmitting device must track V
REF
of the receiving device.
4. V
IH
(max.)= V
DDQ
+1.5V for a pulse and it which can not be greater than 1/3 of the cycle rate.
5. V
IL
(mim.)= -1.5V for a pulse width and it can not be greater than 1/3 of the cycle rate.
6. Output logic high voltage and low voltage is depend on channel condition.(Ract , Ron)
7. For any pin under test input of 0V < V
IN
< V
DD
is acceptable. For all other pins that are not under test V
IN
=0V
Note :
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DD
-1.0 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DDQ
-0.5 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
4.5
W
Short circuit current
I
OS
50
mA
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