參數(shù)資料
型號(hào)： K4N26323AE-GC20
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Mbit GDDR2 SDRAM
中文描述： 128Mbit GDDR2 SDRAM的
文件頁(yè)數(shù)： 20/52頁(yè)
文件大?。?/td> 826K
代理商： K4N26323AE-GC20
- 20 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is
triggered when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can
be used to precharge each bank independently or all banks simultaneously. Three address bits A8, BA0 and BA1 are
used to define which bank to precharge when the command is issued.
Bank Selection for Precharge by Address Bits
Burst Read Operation Followed by Precharge
For the earliest possible precharge, the precharge command may be issued on the rising edge which is CAS latency
(CL) clock cycles before the end of the read burst. A new bank active (command) may be issued to the same bank after
the RAS precharge time (t
RP
). A precharge command cannot be issued until t
RAS
is satisfied.
A8
BA1
BA0
Precharged Bank(s)
LOW
LOW
LOW
Bank 0 only
LOW
LOW
HIGH
Bank 1 only
LOW
HIGH
LOW
Bank 2 only
LOW
HIGH
HIGH
Bank 3 only
HIGH
DON’T CARE
DON’T CARE
All Banks 0 ~ 3
CL =7
Burst Read Operation Followed by Precharge: RL = 7 (AL=0, CL=7), t
RP
= 8
0
3
2
5
6
7
8
9
10
11
Precharge
NOP
NOP
NOP
NOP
NOP
Active
Bank A
NOP
NOP
DQ
CK, CK
DQS
CMD
READ A
Post CAS
4
> = t
RP
NOP
DOUTA
0
DOUTA
1
DOUTA
2
DOUTA
3
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