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| 型號(hào)： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對(duì)移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM |
| 文件頁(yè)數(shù)： | 9/55頁(yè) |
| 文件大小： | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
9
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionRegister Definition
1. At first, device core power (V
DD
) and device IO power (V
DDQ
) must be brought up simultaneously. Typically V
DD
and V
DDQ
are driven from a single power converter output.
Assert and hold CKE and DQM to a HIGH level.
2. After V
DD
and V
DDQ
are stable and CKE is HIGH, apply stable clocks.
3. Wait for 200
μ
s while issuing NOP or DESELECT commands.
4. Issue a PRECHARGE ALL command, followed by NOP or DESELECT commands for at least t
RP
period.
5. Issue two AUTO REFRESH commands, each followed by NOP or DESELECT commands for at least t
RFC
period.
6. Issue two MODE REGISTER SET commands for programming the Mode Register and Extended Mode
Register, each followed by NOP or DESELECT commands for at least t
MRD
period; the order in which both
registers are programmed is not important. Programming of the Extended Mode Register may be omitted when
default values (half drive strength, 4 bank refresh) will be used.
Following these steps, the Mobile-RAM is ready for normal operation.
2.2
Register Definition
2.2.1
Mode Register
The Mode Register is used to define the specific mode of operation of the Mobile-RAM. This definition includes
the selection of a burst length (bits A0-A2), a burst type (bit A3), a CAS latency (bits A4-A6), and a write burst
mode (bit A9). The Mode Register is programmed via the MODE REGISTER SET command (with BA0 = 0 and
BA1 = 0) and will retain the stored information until it is programmed again or the device loses power.
The Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before
initiating any subsequent operation. Violating either of these requirements results in unspecified operation.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
Field
WB
Bits
9
Type
w
Description
Write Burst Mode
0
B
Burst Write
1
B
Single Write
CAS Latency
010
B
2
011
B
3
Note:All other bit combinations are RESERVED.
Burst Type
0
B
Sequential
1
B
Interleaved
CL
[6:4]
w
BT
3
w
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| HYB18L256160B | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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