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參數(shù)資料
| 型號： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對移動應(yīng)用的DRAM 128 - Mbit的移動RAM |
| 文件頁數(shù)： | 17/55頁 |
| 文件大小： | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
17
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
2.4.4
ACTIVE
Figure 9
ACTIVE Command
Before any READ or WRITE commands can be issued to a bank within the Mobile-RAM, a row in that bank must
be “opened” (activated). This is accomplished via the ACTIVE command and addresses A0 - A11, BA0 and BA1
(see
Figure 9
), which decode and select both the bank and the row to be activated. After opening a row (issuing
an ACTIVE command), a READ or WRITE command may be issued to that row, subject to the t
RCD
specification.
A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active
row has been “closed” (precharged).
The minimum time interval between successive ACTIVE commands to the same bank is defined by t
RC
. A
subsequent ACTIVE command to another bank can be issued while the first bank is being accessed, which results
in a reduction of total row-access overhead. The minimum time interval between successive ACTIVE commands
to different banks is defined by t
RRD
.
Figure 10
Bank Activate Timings
$ONgT #ARE
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2!
"ANK !DDRESS
2OW !DDRESS
"! "!
"!
! !
2!
7%
#!3
2!3
#3
#+%
(IGH
#,+
T
22$
T
2#$
$ONgT #ARE
#,+
2$ 72
./0
./0
./0
!#4
./0
!#4
#OMMAND
2/7
2/7
#/,
! !
"! X
"! Y
"! Y
"!
"!
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18L256160B | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYMP112S64LMP8-C4 | DDR2 SDRAM SO-DIMM |
| HYMP112S64LMP8-C5 | DDR2 SDRAM SO-DIMM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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