參數(shù)資料
型號(hào): HYB18L128160BF
廠商: QIMONDA
英文描述: DRAMs for Mobile Applications 128-Mbit Mobile-RAM
中文描述: 針對(duì)移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM
文件頁數(shù): 4/55頁
文件大小: 1399K
代理商: HYB18L128160BF
Data Sheet
4
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
OverviewPin Configuration
1.2
Pin Configuration
Figure 1
Standard Ballout 128-Mbit Mobile-RAM
Table 3
Type
Commercial Temperature Range
HYB18L128160BC-7.5
Extended Temperature Range
HYE18L128160BC-7.5
Ordering Information
Package
Description
P-VFBGA-54-2
133 MHz 4 Banks
×
2 Mbit
×
16 LP-SDRAM
P-VFBGA-54-2
133 MHz 4 Banks
×
2 Mbit
×
16 LP-SDRAM
Table 4
Type
1)
Commercial Temperature Range
HYB18L128160BF-7.5
Extended Temperature Range
HYE18L128160BF-7.5
Ordering Information for Green Products
Package
1) HYB / HYE: Designator for memory products (HYB: standard temp. range; HYE: extended temp. range)
18L: 1.8V Mobile-RAM
128: 128 MBit density
160: 16 bit interface width
B: die revision
C / F: lead-containing product (C) / green product (F)
-7.5: speed grade(s): min. clock cycle time
Description
P-VFBGA-54-2
133 MHz 4 Banks
×
2 Mbit
×
16 LP-SDRAM
P-VFBGA-54-2
133 MHz 4 Banks
×
2 Mbit
×
16 LP-SDRAM
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