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| 型號： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對移動應(yīng)用的DRAM 128 - Mbit的移動RAM |
| 文件頁數(shù)： | 43/55頁 |
| 文件大?。?/td> | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
43
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionFunction Truth Tables
Table 16
Current State
Any
Current State Bank n - Command to Bank m (different bank)
CS
RAS CAS
WE
Command / Action
H
X
X
X
DESELECT (NOP / continue previous operation)
L
H
H
H
NO OPERATION (NOP / continue previous operation)
X
X
X
X
Any command otherwise allowed to bank n
L
L
H
H
ACTIVE (select and activate row)
L
H
L
H
READ (select column and start READ burst)
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
Read (Auto-
Precharge
Disabled)
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
Write (Auto-
Precharge
Disabled)
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
Read
(with Auto-
Precharge)
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
Write
(with Auto-
Precharge)
L
H
L
L
WRITE (select column and start WRITE burst)
L
L
H
L
PRECHARGE (deactivate row in bank or banks)
Notes
1)2)3)4)5)6)
1) This table applies when CKEn-1 was HIGH and CKEn is HIGH and after t
RC
has been met (if the previous state was Self
Refresh).
2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands
shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is
allowable). Exceptions are covered in the notes below.
3) Current state definitions:
Idle:The bank has been precharged, and t
RP
has been met.
Row Active:A row in the bank has been activated, and t
RCD
has been met. No data bursts/accesses and no register
accesses are in progress.
Read:A READ burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been
terminated.
Write:A WRITE burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been
terminated.
Read with AP
Enabled:Starts with registration of a READ command with Auto Precharge enabled and ends when t
RP
has been
met. Once t
RP
is met, the bank is in the idle state.
Write with AP
Enabled:Starts with registration of a WRITE command with Auto Precharge enabled and ends when t
RP
has been
met. Once t
RP
is met, the bank is in the idle state.
4) AUTO REFRESH, SELF REFRESH and MODE REGISTER SET commands may only be issued when all banks are idle.
5) A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state
only.
6) All states and sequences not shown are illegal or reserved.
to
Idle
Row
Activating,
Active, or
Precharging
to
to
to 7)
to
to
L
L
L
H
H
L
H
H
ACTIVE (select and activate row)
READ (select column and start READ burst)
to
to
to 8)
to
L
L
L
H
H
L
H
H
ACTIVE (select and activate row)
READ (select column and start READ burst)
to
to
to
to
L
L
L
H
H
L
H
H
ACTIVE (select and activate row)
READ (select column and start READ burst)
to
to , 9)
to
to
L
L
L
H
H
L
H
H
ACTIVE (select and activate row)
READ (select column and start READ burst)
to
to ,
to ,
to
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| HYB18L256160B | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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