參數(shù)資料
型號(hào)： HYB18L128160BF
廠商： QIMONDA
英文描述： DRAMs for Mobile Applications 128-Mbit Mobile-RAM
中文描述： 針對(duì)移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM
文件頁(yè)數(shù)： 24/55頁(yè)
文件大小： 1399K
代理商： HYB18L128160BF
Data Sheet
24
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
Figure 19
Clock Suspend Mode for READ Bursts
2.4.5.3
READ - DQM Operation
DQM may be used to suppress read data and place the output buffers into High-Z state. The generic timing
parameters as listed in
Table 11
also apply to this DQM operation. The read burst in progress is not affected and
will continue as programmed.
Figure 20
READ Burst - DQM Operation
2.4.5.4
READ to WRITE
A READ burst may be followed by or truncated with a WRITE command. The WRITE command can be performed
to the same or a different (active) bank. Care must be taken to avoid bus contention on the DQs; therefore it is
recommended that the DQs are held in High-Z state for a minimum of 1 clock cycle. This can be achieved by either
delaying the WRITE command, or suppressing the data-out from the READ by pulling DQM HIGH two clock cycles
"A ! #OL N ETC
$/ N ETC
#,
IN THE CASE SHOWN
#LOCK SUSPEND LATENCY T
#3,
IS
"ANK ! #OLUMN N ETC
$ATA /UT FROM COLUMN N ETC
CLOCK CYCLE
$ONgT #ARE
#,+
T
#3,
T
#3,
T
#3,
#+%
INTERNAL
CLOCK
#OMMAND
2%!$
./0
./0
./0
./0
./0
"A !
#OL N
!DDRESS
$1
$/ N
$/ N
$/ N
$/ N
"A ! #OL N
$/ N
#,
$1- READ LATENCY T
$1:
IS
BANK ! COLUMN N
$ATA /UT FROM COLUMN N
IN THE CASE SHOWN
CLOCK CYCLES
$ONgT #ARE
#,+
#OMMAND
./0
2%!$
./0
./0
./0
./0
./0
./0
$1-
T
$1:
!DDRESS
"A !
#OL N
$1
$/ N
$/ N
$/ N
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18L128160BF-7.5 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
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HYB18L256160BC-7.5 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYB18L256160BC-75 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:DRAMs for Mobile Applications
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