參數(shù)資料
型號(hào)： HYB18L128160BF
廠商： QIMONDA
英文描述： DRAMs for Mobile Applications 128-Mbit Mobile-RAM
中文描述： 針對(duì)移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM
文件頁(yè)數(shù)： 18/55頁(yè)
文件大?。?/td> 1399K
代理商： HYB18L128160BF
Data Sheet
18
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
2.4.5
READ
Figure 11
READ Command
Subsequent to programming the mode register with CAS latency and burst length, READ bursts are initiated with
a READ command, as shown in
Figure 11
. Basic timings for the DQs are shown in
Figure 12
; they apply to all
read operations and therefore are omitted from all subsequent timing diagrams.
The starting column and bank addresses are provided with the READ command and Auto Precharge is either
enabled or disabled for that burst access. If Auto Precharge is enabled, the row being accessed starts precharge
at the completion of the burst, provided t
RAS
has been satisfied. For the generic READ commands used in the
following illustrations, Auto Precharge is disabled.
Table 10
Parameter
Timing Parameters for ACTIVE Command
Symbol
- 7.5
Units
Notes
min.
max.
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
ACTIVE bank A to ACTIVE bank B delay
t
RC
t
RCD
t
RRD
67
19
15
—
—
—
ns
ns
ns
1)
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
"! "!
"!
7%
#+%
(IGH
#,+
2!3
#!3
! !
#!
$ONgT #ARE
"!
#!
!0
"ANK !DDRESS
#OLUMN !DDRESS
!UTO 0RECHARGE
!
!0
$ISABLE !0
%NABLE !0
#3
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