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參數資料
| 型號： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對移動應用的DRAM 128 - Mbit的移動RAM |
| 文件頁數： | 20/55頁 |
| 文件大?。?/td> | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
20
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
During READ bursts, the valid data-out element from the starting column address is available following the CAS
latency after the READ command. Each subsequent data-out element is valid nominally at the next positive clock
edge. Upon completion of a READ burst, assuming no other READ command has been initiated, the DQs go to
High-Z state.
Figure 13
and
Figure 14
show single READ bursts for each supported CAS latency setting.
Figure 13
Single READ Burst (CAS Latency = 2)
Table 11
Parameter
Timing Parameters for READ
Symbol
- 7.5
Units
Notes
min.
max.
Access time from CLK
CL = 3
CL = 2
t
AC
t
AC
t
LZ
t
HZ
t
OH
t
DQZ
t
RC
t
RCD
t
RAS
t
RP
—
—
1.0
3.0
2.5
—
67
19
45
19
5.4
6.0
—
7.0
–
2
—
—
100k
—
ns
ns
ns
ns
ns
t
CK
ns
ns
ns
ns
—
DQ low-impedance time from CLK
DQ high-impedance time from CLK
Data out hold time
DQM to DQ High-Z delay (READ Commands)
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
ACTIVE to PRECHARGE command period
PRECHARGE command period
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
—
—
—
1)
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| HYB18L256160B | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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