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| 型號： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對移動應(yīng)用的DRAM 128 - Mbit的移動RAM |
| 文件頁數(shù)： | 40/55頁 |
| 文件大?。?/td> | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
40
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
2.4.10
POWER DOWN
Figure 45
Power Down Entry Command
Power-down is entered when CKE is registered LOW (no accesses can be in progress). If power-down occurs
when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a
row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input
and output buffers, excluding CLK and CKE. CKE LOW must be maintained during power-down.
Power-down duration is limited by the refresh requirements of the device (t
REF
).
The power-down state is synchronously exited when CKE is registered HIGH (along with a NOP or DESELECT
command). One clock delay is required for power down entry and exit.
Table 14
Parameter
Timing Parameters for AUTO REFRESH and SELF REFRESH
Symbol
- 7.5
Units
Notes
min.
max.
ACTIVE to ACTIVE command period
PRECHARGE command period
Refresh period (4096 rows)
Self refresh exit time
t
RC
t
RP
t
REF
t
SREX
67
19
–
1
–
–
64
–
ns
ns
ms
t
CK
1)
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18L256160B | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYMP112S64LMP8-C4 | DDR2 SDRAM SO-DIMM |
| HYMP112S64LMP8-C5 | DDR2 SDRAM SO-DIMM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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