參數(shù)資料
型號(hào)： HYB18L128160BF
廠商： QIMONDA
英文描述： DRAMs for Mobile Applications 128-Mbit Mobile-RAM
中文描述： 針對(duì)移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM
文件頁(yè)數(shù)： 45/55頁(yè)
文件大?。?/td> 1399K
代理商： HYB18L128160BF
Data Sheet
45
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Electrical CharacteristicsOperating Conditions
3
Electrical Characteristics
3.1
Operating Conditions
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Table 18
Parameter
Absolute Maximum Ratings
Symbol
Values
Unit
min.
max.
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
V
DD
V
DDQ
V
IN
V
OUT
T
C
T
C
T
STG
P
D
I
OUT
-0.3
-0.3
-0.3
-0.3
0
-25
-55
–
–
2.7
2.7
V
DDQ
+ 0.3
v
DDQ
+ 0.3
+70
+85
+150
0.7
50
V
V
V
V
°
C
°
C
°
C
W
mA
Commercial
Extended
Storage Temperature
Power Dissipation
Short Circuit Output Current
Table 19
Parameter
Pin Capacitances
1)2)
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 with VDD, VDDQ applied and all other pins (except the pin under test)
floating. DQ’s should be in high impedance state. This may be achieved by pulling CKE to low level.
Symbol
Values
Unit
min.
max.
Input capacitance: CLK
Input capacitance: all other input pins
Input/Output capacitance: DQ
C
I1
C
I2
C
IO
1.5
1.5
3.0
3.0
3.0
5.0
pF
pF
pF
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