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| 型號： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對移動應(yīng)用的DRAM 128 - Mbit的移動RAM |
| 文件頁數(shù)： | 29/55頁 |
| 文件大?。?/td> | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
29
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
Figure 26
WRITE Burst (CAS Latency = 3)
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either
case, a continuous flow of input data can be maintained. A WRITE command can be issued on any positive edge
of clock following the previous WRITE command. The first data element from the new burst is applied after either
the last element of a completed burst (
Figure 27
) or the last desired data element of a longer burst which is being
truncated (
Figure 28
). The new WRITE command should be issued x cycles after the first WRITE command,
where x equals the number of desired data elements.
Figure 27
Consecutive WRITE Bursts
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相關(guān)PDF資料 |
PDF描述 |
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| HYB18L256160B | DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYMP112S64LMP8-C4 | DDR2 SDRAM SO-DIMM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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