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參數(shù)資料
| 型號(hào)： | HYB18L128160BF |
| 廠商： | QIMONDA |
| 英文描述： | DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| 中文描述： | 針對(duì)移動(dòng)應(yīng)用的DRAM 128 - Mbit的移動(dòng)RAM |
| 文件頁數(shù)： | 48/55頁 |
| 文件大?。?/td> | 1399K |
| 代理商： | HYB18L128160BF |
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Data Sheet
48
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Electrical CharacteristicsOperating Currents
3.3
Operating Currents
Table 22
Parameter & Test Conditions
Maximum Operating Currents
1)
1) 0
°
C
≤
T
C
≤
70
°
C (comm.); -25
°
C
≤
T
C
≤
85
°
C (ext.); V
DD
= V
DDQ
= 1.70V to 1.95V;
Recommended Operating Conditions unless otherwise noted
2) These values are measured with t
CK
= 7.5 ns
3) All parameters are measured with no output loads.
Symbol
Values
- 7.5
Unit Notes
Operating current:
one bank: active / read / precharge, BL = 1, t
RC
= t
RCmin
Precharge power-down standby current:
all banks idle, CS
≥
V
IHmin
, CKE
≤
V
ILmax
,
inputs changing once every two clock cycles
Precharge power-down standby current with clock stop:
all banks idle, CS
≥
V
IHmin
, CKE
≤
V
ILmax
, all inputs stable
Precharge non power-down standby current:
all banks idle, CS
≥
V
IHmin
, CKE
≥
V
IHmin
,
inputs changing once every two clock cycles
Precharge non power-down standby current with clock stop:
all banks idle, CS
≥
V
IHmin
, CKE
≥
V
IHmin
, all inputs stable
Active power-down standby current:
one bank active, CS
≥
V
IHmin
, CKE
≤
V
ILmax
,
inputs changing once every two clock cycles
Active power-down standby current with clock stop:
one bank active, CS
≥
V
IHmin
, CKE
≤
V
ILmax
, all inputs stable
Active non power-down standby current:
one bank active, CS
≥
V
IHmin
, CKE
≥
V
IHmin
,
inputs changing once every two clock cycles
Active non power-down standby current with clock stop:
one bank active, CS
≥
V
IHmin
, CKE
≥
V
IHmin
, all inputs stable
Operating burst read current:
all banks active; continuous burst read,
inputs changing once every two clock cycles
Auto-Refresh current:
t
RC
= t
RCmin
, “burst refresh”,
inputs changing once every two clock cycles
Self Refresh current:
self refresh mode, CS
≥
V
IHmin
, CKE
≤
V
ILmax
, all inputs stable
Deep Power Down current
I
DD1
60
mA
2)3)
I
DD2P
0.6
mA
I
DD2PS
0.5
mA
—
I
DD2N
13
mA
I
DD2NS
1.0
mA
—
I
DD3P
1.0
mA
I
DD3PS
0.75
mA
—
I
DD3N
15
mA
I
DD3NS
1.5
mA
—
I
DD4
45
mA
I
DD5
90
mA
I
DD6
see
Table 23
—
I
DD7
20
μ
A
—
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
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