- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370430 > HB52RD328DC (Hitachi,Ltd.) 256 MB Unbuffered SDRAM S.O.DIMM(256 MB 未緩沖同步DRAM S.O.DIMM) PDF資料下載
參數(shù)資料
| 型號： | HB52RD328DC |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256 MB Unbuffered SDRAM S.O.DIMM(256 MB 未緩沖同步DRAM S.O.DIMM) |
| 中文描述： | 256 MB的無緩沖內(nèi)存的SODIMM（256 MB的未緩沖同步內(nèi)存的SODIMM） |
| 文件頁數(shù)： | 45/68頁 |
| 文件大小： | 885K |
| 代理商： | HB52RD328DC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁當前第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁
HB52RD328DC-F
45
Read with auto precharge to Read command interval
1. Different bank:
When some banks are in the active state, the second read command (another bank) is
executed. Even when the first read with auto-precharge is a burst read that is not yet finished, the data read by
the second command is valid. The internal auto-precharge of one bank starts at the next clock of the second
command.
Read with Auto Precharge to Read Command Interval
(Different bank)
CK
Command
BA
Dout
READ A
READ
out A0
out A1
out B0
out B1
CE
Latency = 3
Burst Length = 4
bank0
Read A
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
2. Same bank:
The consecutive read command (the same bank) is illegal.
Write with auto precharge to Write command interval
1. Different bank:
When some banks are in the active state, the second write command (another bank) is
executed. In the case of burst writes, the second write command has priority. The internal auto-precharge of
one bank starts at the next clock of the second command .
Write with Auto Precharge to Write Command Interval
(Different bank)
CK
Command
BA
Din
WRIT A
WRIT
in B1
in B2
in B3
in A0
in A1
in B0
Burst Length = 4
bank0
Write A
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
2. Same bank:
The consecutive write command (the same bank) is illegal.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52RF1289E2-75B | x72 SDRAM Module |
| HB52RF1289E2 | 1 GB Registered SDRAM DIMM 128-Mword 】 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M 】 4 Components) PC133 SDRAM |
| HB52RF1289E2 | 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM) |
| HB52RF329E2 | 256 MB Registered SDRAM DIMM(256 MB 寄存同步DRAM DIMM) |
| HB52RF648DC-B | 512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 】 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 】 8 components) PC133/100 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52RD328DC-A6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD328DC-A6FL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD328DC-B6F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD328DC-B6FL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HB52RD328DC-F | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 100 MHz Memory Bus, 2-Bank Module (32 pcs of 16 M × 4 components) PC100 SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。