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參數(shù)資料
| 型號： | W28J320TT90L |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 2.7V PROM, 90 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP-48 |
| 文件頁數(shù)： | 39/48頁 |
| 文件大?。?/td> | 1513K |
| 代理商： | W28J320TT90L |
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W28J320B/T
- 44 -
Block Erase, Full Chip Erase, Word/Byte Write And Lock-Bit Configuration
Performance(3)
VDD = 2.7V to 3.6V, TA = -40°C to +85°C
VPP = 2.7V 3.6V
VPP = 11.7V 12.3V
SYM.
PARAMETER
NOTE
Min. Typ.(1) Max.
UNIT
32K word Block
2
33
200
20
S
Word Write Time
4K word Block
2
36
200
27
S
64K byte Block
2
31
200
19
S
tWHQV1
tEHQV1
Byte Write Time
8K byte Block
2
32
200
26
S
32K word Block
2
1.1
4
0.66
S
Block Write Time
(In word mode)
4K word Block
2
0.15
0.5
0.12
S
64K byte Block
2
2.2
7
1.4
S
Block Write Time
(In byte mode)
8K byte Block
2
0.3
1
0.25
S
32K word Block
64K byte Block
2
1.2
6
0.9
S
tWHQV2
tEHQV2
Block Erase Time
4K word Block
8K byte Block
2
0.6
5
0.5
S
Full Chip Erase Time
2
84
420
64
S
tWHQV3
tEHQV3
Set Lock-Bit Time
2
56
200
42
S
tWHQV4
tEHQV4
Clear Block Lock-Bits Time
2
1
5
0.69
S
tWHRZ1
tEHRZ1
Word/Byte Write Suspend Latency
Time to Read
4
6
15
6
15
S
tWHRZ2
tEHRZ2
Block Erase Suspend Latency Time to
Read
4
16
30
16
30
S
tERES
Latency Time from Block Erase
Resume Command to Block Erase
Suspend Command
5
600
S
Notes:
1. Typical values measured at TA = +25
° C and VDD = 3.0V, VPP = 3.0V or 12.0V. Assumes corresponding lock-bits are not set.
Subject to change based on device characterization.
2. Excludes system-level overhead.
3. Sampled but not 100% tested.
4. A latency time is required from issuing suspend command (#WE or #CE going high) until RY/#BY going High Z or SR.7 going
"1".
5. If the time between writing the Block Erase Resume command and writing the Block Erase Suspend command is shorter than
tERES and both commands are written repeatedly, a longer time is required than standard block erase until the completion of
the operation.
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