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參數(shù)資料
| 型號(hào)： | W29S201T-45 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 128K X 16 FLASH 5V PROM, 15 ns, PDSO48 |
| 封裝： | 12 X 20 MM, TSOP1-48 |
| 文件頁數(shù)： | 1/31頁 |
| 文件大?。?/td> | 253K |
| 代理商： | W29S201T-45 |
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Preliminary W29S201
128K
× 16 CMOS FLASH MEMORY
WITH SYNCHRONOUS BURST READ
Publication Release Date: April 1999
- 1 -
Revision A1
GENERAL DESCRIPTION
The W29S201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K
× 16 bits. The
W29S201 supports both assynchronous & high performance synchronous burst read modes. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not
required. The unique cell architecture of the W29S201 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
5-volt Read
5-volt Erase
5-volt Program
Fast Program operation:
Word-by-Word programming: 50 S (max.)
Fast Erase operation: 100 mS (typ.)
Fast Synchronous Burst Read access time:
15/17 nS (typ.)
High performance synchronous burst read mode
up to 50Mhz Clock Frequency
Support Linear Burst Mode Read with Wrap-
Around Feature.
No Burst Length Limitation.
Fast Assynchronous Random Read access
time: 45//55 nS
Endurance: 1K/10K cycles (min.)
Twenty-year data retention
Hardware data protection
Sector configuration
One 8K words boot block with lockout
protection
Two 8K words parameter blocks
One 104K words (208K bytes) Main Memory
Array Blocks
Low power consumption
Active current: 35 mA (typ.)
Standby current: 20 A (typ.)
Automatic program and erase timing with
internal VPP generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 48-pin TSOP
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