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參數(shù)資料
| 型號(hào)： | TCM4400EGGM |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | GSM/DCS BASEBAND AND VOICE A/D AND D/A RF INTERFACE CIRCUIT |
| 中文描述： | 的GSM / DCS的基帶和語(yǔ)音的A / D和D / A射頻接口電路 |
| 文件頁(yè)數(shù)： | 11/64頁(yè) |
| 文件大小： | 888K |
| 代理商： | TCM4400EGGM |
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TCM4400E
GSM/DCS BASEBAND AND VOICE A/D
AND D/A RF INTERFACE CIRCUIT
SLWS082A – JULY 1999 – REVISED MARCH 2000
11
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
channel characteristics (continued)
SNR vs signal level–baseband downlink path
PARAMETER
TEST CONDITIONS
200 kHz bandwidth
MIN
21
TYP
MAX
UNIT
–50 dBm0
–40 dBm0
26
–30 dBm0
36
Signal level
–20 dBm0
46
dB
–10 dBm0
50
–5 dBm0
55
0 dBm0
30
Idle channel noise, 0 Hz –200 kHz
–66
dBm0
gain characteristics of the baseband downlink path
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Absolute gain error relative to VVREF
at –10 dBm0 and 18 kHz
–11
–10
–9
dB
0 dBm0
–0.25
0.25
–5 dBm0
–0.25
0.25
Gain tracking error Over the range 3 dBm0 to
Gain tracking error. Over the range 3 dBm0 to – 50 dBm0 at
18 kHz with reference –10 dBm0
18 kHz with reference 10 dBm0
–10 dBm0
Reference level
0
dB
–20 dBm0
–0.25
0.25
–30 dBm0
–0.25
0.25
–40 dBm0
–50 dBm0
–0.25
–0.50
0.25
0.50
dB
group delay – baseband downlink path
PARAMETER
MIN
TYP
MAX
UNIT
μ
s
Group delay
0 Hz to 100 kHz
28
I and Q channels matching – baseband downlink path
áááááááááááááááááááááááááááááá
áááááááááááááááááá
baseband downlink path global characteristics
PARAMETER
áááááááááá
TEST CONDITIONS
MIN
–0.5
TYP
ááááá
MAX
0.5
UNIT
Gain matching between channels
0 Hz to 96 kHz
18 kHz sinewave
ns
dB
ááááááááááááááááááááááá
ááá
ááá
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Power supply rejection, 0 Hz –100 kHz band
70
dB
timing requirements of baseband downlink path (see Figure 2)
MIN
NOM
MAX
UNIT
μ
s
μ
s
μ
s
1/4-bit
μ
s
μ
s
μ
s
tsu4
tw3
tsu5
tw4
tsu6
th4
th5
Values in the above table are given for system information only.
Setup time, BDLON
↑
to BCAL
↑
Pulse duration, BCAL
Setup time BCAL low before BENA
↑
Pulse duration, BENA high
Setup time, BENA
↑
before DATAOUT VALID
Hold time, DATAOUT VALID after BENA
↓
Hold time, BDLON low after BENA low
5
60
0
N effective duration of burst controlled by BENA
N
24.3
28
3.7
0
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