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參數(shù)資料
| 型號： | STLC1510 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NorthenLite G.lite DMT Transceiver |
| 中文描述： | NorthenLite G.lite大唐收發(fā)器 |
| 文件頁數(shù)： | 23/40頁 |
| 文件大?。?/td> | 426K |
| 代理商： | STLC1510 |
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23/40
STLC1510
5.12Processor Emulation
There are three programmable processors on the
LAVA ASIC: an ARM microprocessor, a D950 Digital
Signal Processor, and a custom DSP engine (BPU).
All these are capable of JTAG based emulation with
the following attributes:
I
Stop on breakpoint.
I
Single step
I
Full register R/W.
I
Program modification and resume.
6.0 ELECTRICAL CHARACTERISTICS
This device shall meet the functional requirements
detailed herein when operated over the specified tim-
ing, electrical, and temperature range.
7.0 OPERATING RANGES
The operating ranges shall be in accordance with the
following table.
7.1 DC Characteristics
The following table identifies the general DC charac-
teristics for input and output pins.
Table 7. Operating Ranges
SYMBOL
PARAMETER
MIN.
NOM.
MAX.
UNITS
VDD3_3
CMOS 3.3v I/O Supply voltage
3.0
3.3
3.6
V
VDD2_5
CMOS 2.5v Core Supply voltage
2.25
2.5
2.75
V
I
DD3
CMOS 3.3v I/O Supply current
11
mA
I
DDS3
CMOS 3.3v I/O Static supply current
TBD
mA
I
DD2
CMOS 2.5v Core Supply current
240
mA
I
DDS2
CMOS 2.5v Core Static supply current
TBD
mA
T
A
Ambient temperature under bias
1
-40
25
85
×
C
T
J
Operating junction temperature
-40
25
105
×
C
<1>
Assuming no air flow and a package thermal resistance of 30
×
C/watt
Table 8. General Interface Electrical Characteristics
SYMBOL
PARAMETER
Conditions
Min
Typ
Max
Unit
V
il
Low level i/p voltage
0.8
V
V
ih
High level i/p voltage
2.0
V
V
ol
Low level o/p voltage
1
I
ol
= 2mA
0.4
V
V
oh
High level o/p voltage
a
I
oh
= 2mA
2.4
V
I
il
Low Level Input Current without pull-up
device
2
V
i
=0V
1.0
μ
A
I
ih
High Level Input Current without pull-
down device
b
V
i
=VD3_3
Vi=VDD5
2.0
4.0
μ
A
μ
A
I
oz
Tri-state Output leakage without pull
up/down device
b
V
o
=0V or
VDD3_3
1.0
μ
A
I
pu
Pullup current
V
i
= 0V
-50
μ
A
I
pd
Pulldown current
V
i
= VDD5
100
μ
A
R
up
Equivalent pull-up resistance
V
i
= 0V
50
k
Rpd
Equivalent pull-down resistance
Vi = VDD2_5
50
k
<1>
<2>
Takes into account 0.075*Vdd voltage drop in both supply lines.
The leakage currents are generally very small, < 1nA. The value given here, i
μ
A, is a maximum that can occur after an Electrostatic
Stress on the pin.
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