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EPSON
S1C6P466 TECHNICAL MANUAL
CHAPTER 6: DIFFERENCES FROM MASK ROM MODELS
6.3 PROM, RAM
The S1C6P466 employs a Flash EEPROM for the internal PROM. The Flash EEPROM can be rewritten up
to 100 times. Rewriting data is done at the user's own risk.
Table 6.3.1 lists the internal memory size of each model.
Table 6.3.1 Memory size
Memory
Code PROM
Data RAM
Data PROM
Display RAM
S1C6P466
16K
× 13 bits
5,120
× 4 bits
2K
× 4 bits
1,020
× 4 bits
S1C63454
4K
× 13 bits
1,024
× 4 bits
2K
× 4 bits
680
× 4 bits
S1C63458
8K
× 13 bits
5,120
× 4 bits
2K
× 4 bits
1,020
× 4 bits
S1C63466
16K
× 13 bits
1,792
× 4 bits
2K
× 4 bits
1,020
× 4 bits
The code PROM and data PROM of the S1C6P466 is a Flash EEPROM and can be rewritten using the
exclusive PROM writer. The size is set according to the largest model among the S1C63454, S1C63458 and
S1C63466. When developing an application for the S1C634xx Series mask ROM model, pay attention to
the memory size.
6.4 Input/Output Ports and LCD Driver
The configuration of the input/output ports and LCD driver of the S1C6P466 is the same as that of the
S1C63466. Table 6.4.1 lists the configuration of each model.
Table 6.4.1 Configuration of input/output ports and LCD driver
Port
Input (K) port
Output (R) port
I/O (P) port
LCD driver
S1C6P466
8 bits
12 bits
60SEG
× 17COM
S1C63454
4 bits
8 bits
40SEG
× 17COM
S1C63458
8 bits
12 bits
60SEG
× 17COM
S1C63466
8 bits
12 bits
60SEG
× 17COM
Note that the S1C63454 supports only one system of the external input interrupt since the input port is
configured with 4 bits (K00–K03). Refer to the "S1C63454 Technical Manual" for details.
6.5 Oscillation Circuit
The S1C6P466 has two oscillation circuits built-in: OSC1 generates a low-speed clock and OSC3 generates
a high-speed clock. In the S1C63454, S1C63458 and S1C63466, the OSC1 and OSC3 oscillation circuits
operate with the internal regulated voltage VD1, note, however, the OSC3 oscillation circuit in the
S1C6P466 operates with the supply voltage VDD. Therefore, the oscillation characteristics of the S1C6P466
are different from those of the mask ROM model (S1C634xx). When using the S1C6P466 as a development
tool for the mask ROM model, the constant of the OSC3 oscillation circuit must be decided according to
the characteristics of the mask ROM model. Also the OSC1 oscillation circuit of the S1C6P466 has differ-
ences in its production process from the mask ROM models. The constant must be decided according to
the characteristics of the mask ROM model.
Table 6.5.1 lists the configuration of the oscillation circuits for each model.
Table 6.5.1 Configuration of oscillation circuit
Oscillation circuit
OSC1
OSC3
S1C6P466
Crystal
32.768 kHz
–
Ceramic
4.1 MHz (Max.)
S1C63454
Crystal
32.768 kHz
CR
60 kHz (Typ.)
CR
1.8 MHz (Typ.)
Ceramic
4.1 MHz (Max.)
S1C63458
Crystal
32.768 kHz
CR
60 kHz (Typ.)
CR
1.8 MHz (Typ.)
Ceramic
4.1 MHz (Max.)
S1C63466
Crystal
32.768 kHz
CR
60 kHz (Typ.)
CR
1.8 MHz (Typ.)
Ceramic
4.1 MHz (Max.)
In the mask ROM models, either crystal or CR can be selected for the OSC1 oscillation circuit by mask
option and either CR or ceramic can be selected for the OSC3 oscillation circuit.