
S1C6F567 TECHNICAL MANUAL
EPSON
143
CHAPTER 6: DIFFERENCES FROM MASK ROM MODELS
6.3 ROM, RAM
The S1C6F567 employs a Flash EEPROM for the internal ROM. The Flash EEPROM can be rewritten up to
100 times. Rewriting data is done at the user's own risk.
Table 6.3.1 lists the internal memory size of each model.
Table 6.3.1 Memory size
Memory
Code ROM
Data RAM
Data ROM
Display RAM
S1C6F567
16K
× 13 bits
5,120
× 4 bits
2K
× 4 bits
1,020 bits
S1C63557
8K
× 13 bits
5,120
× 4 bits
2K
× 4 bits
680 bits
S1C63567
16K
× 13 bits
5,120
× 4 bits
2K
× 4 bits
1,020 bits
The code ROM and data ROM of the S1C6F567 is a Flash EEPROM and can be rewritten using the
exclusive PROM writer. The size is set according to the largest model among the S1C63557 and S1C63567.
When developing an application for the S1C635xx Series mask ROM model, pay attention to the memory
size.
6.4 Input/Output Ports and LCD Driver
The configuration of the input/output ports and LCD driver of the S1C6F567 is the same as that of the
S1C63567. Table 6.4.1 lists the configuration of each model.
Table 6.4.1 Configuration of input/output ports and LCD driver
Port
Input (K) port
Output (R) port
I/O (P) port
LCD driver
S1C6F567
8 bits
12 bits
16 bits
60SEG
× 17COM
S1C63557
8 bits
12 bits
16 bits
60SEG
× 17COM
S1C63567
8 bits
12 bits
16 bits
60SEG
× 17COM
6.5 Oscillation Circuit
The S1C6F567 has two oscillation circuits built-in: OSC1 generates a low-speed clock and OSC3 generates
a high-speed clock. In the S1C63557 and S1C63567, the OSC1 and OSC3 oscillation circuits operate with
the internal regulated voltage VD1, note, however, the OSC3 oscillation circuit in the S1C6F567 operates
with the supply voltage VDD. Therefore, the oscillation characteristics of the S1C6F567 are different from
those of the mask ROM model (S1C635xx). When using the S1C6F567 as a development tool for the mask
ROM model, the constant of the OSC3 oscillation circuit must be decided according to the characteristics
of the mask ROM model. Also the OSC1 oscillation circuit of the S1C6F567 has differences in its produc-
tion process from the mask ROM models. The constant must be decided according to the characteristics
of the mask ROM model.
Table 6.5.1 lists the configuration of the oscillation circuits for each model.
Table 6.5.1 Configuration of oscillation circuit
Oscillation circuit
OSC1
OSC3
S1C6F567
Crystal
32.768 kHz
–
Ceramic
3.58 MHz (Typ.)
S1C63557
Crystal
32.768 kHz
–
Ceramic
3.58 MHz (Typ.)
S1C63567
Crystal
32.768 kHz
CR
60 kHz (Typ.)
CR
1.8 MHz (Typ.)
Ceramic
3.58 MHz (Typ.)
In the mask ROM models, either crystal or CR can be selected for the OSC1 oscillation circuit by mask
option and either CR or ceramic can be selected for the OSC3 oscillation circuit.