參數(shù)資料
型號(hào): S1C63406F
元件分類: 微控制器/微處理器
英文描述: 4-BIT, MROM, 4.2 MHz, MICROCONTROLLER, PQFP128
封裝: PLASTIC, TQFP15-128
文件頁數(shù): 30/144頁
文件大小: 1160K
代理商: S1C63406F
S1C63406 TECHNICAL MANUAL
EPSON
117
CHAPTER 7: ELECTRICAL CHARACTERISTICS
7.5 Oscillation Characteristics
The oscillation characteristics change depending on the conditions (components used, board pattern,
etc.). Use the following characteristics as reference values.
OSC1 crystal oscillation circuit
Item
Oscillation start time
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
tsta
CD
f/V
f/IC
f/CG
Vhho
Rleak
Unit
s
pF
ppm
V
M
Max.
3
5
10
Typ.
14
20
Min.
-10
10
3.6
200
Condition
Including the parasitic capacitance inside the IC (in chip)
VDD=1.3 to 3.6V
CG=5 to 25pF
CG=5pF (VDD)
Between OSC1 and VSS
Unless otherwise specified: VDD=1.3 to 3.6V, VSS=0V, fOSC1=32.768kHz, CG=25pF, CD=built-in, Ta=-40 to 85
°C
OSC1 CR oscillation circuit
Item
Oscillation frequency dispersion
Oscillation start time
Symbol
fOSC1
tsta
Unit
%
s
Max.
25
100
Typ.
Min.
-25
Condition
RCR1=constant
Unless otherwise specified: VDD=1.3 to 3.6V, VSS=0V, RCR1=680k
, Ta=-40 to 85°C
OSC3 ceramic oscillation circuit
Item
Oscillation start time
Symbol
tsta
Unit
ms
Max.
5
Typ.
Min.
Condition
Unless otherwise specified: VDD=1.8 to 3.6V, VSS=0V, Ceramic oscillator: 3.58MHz, CGC=CDC=30pF, Ta=-40 to 85
°C
OSC3 crystal oscillation circuit
Item
Oscillation start time
Symbol
tsta
Unit
ms
Max.
10
Typ.
Min.
Condition
Unless otherwise specified: VDD=1.8 to 3.6V, VSS=0V, Crystal oscillator: 4MHz, CGC=CDC=15pF, Ta=-40 to 85
°C
OSC3 CR oscillation circuit
Item
Oscillation frequency dispersion
Oscillation start time
Symbol
fOSC3
tsta
Unit
%
s
Max.
25
100
Typ.
Min.
-25
Condition
VDD=1.8 to 3.6V (VDC=3), RCR2=constant
VDD=1.6 to 3.6V (VDC=2), RCR2=constant
VDD=1.4 to 3.6V (VDC=1), RCR2=constant
Unless otherwise specified: VDD=1.4 to 3.6V, VSS=0V, Ta=-40 to 85
°C
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