參數(shù)資料
型號(hào): PSD854F2A-90MT
廠商: STMICROELECTRONICS
元件分類(lèi): 微控制器/微處理器
英文描述: 256K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP52
封裝: ROHS COMPLIANT, PLASTIC, QFP-52
文件頁(yè)數(shù): 67/128頁(yè)
文件大?。?/td> 1045K
代理商: PSD854F2A-90MT
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)當(dāng)前第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)
PSD8XXFX
Sector Select and SRAM Select
Doc ID 7833 Rev 7
12
Sector Select and SRAM Select
Sector Select (FS0-FS7, CSBOOT0-CSBOOT3) and SRAM Select (RS0) are all outputs of
the DPLD. They are setup by writing equations for them in PSDabel. The following rules
apply to the equations for these signals:
1.
Primary Flash memory and secondary Flash memory Sector Select signals must not
be larger than the physical sector size.
2.
Any primary Flash memory sector must not be mapped in the same memory space as
another Flash memory sector.
3.
A secondary Flash memory sector must not be mapped in the same memory space as
another secondary Flash memory sector.
4.
SRAM, I/O, and Peripheral I/O spaces must not overlap.
5.
A secondary Flash memory sector may overlap a primary Flash memory sector. In
case of overlap, priority is given to the secondary Flash memory sector.
6.
SRAM, I/O, and Peripheral I/O spaces may overlap any other memory sector. Priority is
given to the SRAM, I/O, or Peripheral I/O.
12.1
Example
FS0 is valid when the address is in the range of 8000h to BFFFh, CSBOOT0 is valid from
8000h to 9FFFh, and RS0 is valid from 8000h to 87FFh. Any address in the range of RS0
always accesses the SRAM. Any address in the range of CSBOOT0 greater than 87FFh
(and less than 9FFFh) automatically addresses secondary Flash memory segment 0. Any
address greater than 9FFFh accesses the primary Flash memory segment 0. You can see
that half of the primary Flash memory segment 0 and one-fourth of secondary Flash
memory segment 0 cannot be accessed in this example. Also note that an equation that
defined FS1 to anywhere in the range of 8000h to BFFFh would not be valid.
Figure 8 shows the priority levels for all memory components. Any component on a higher
level can overlap and has priority over any component on a lower level. Components on the
same level must not overlap. Level one has the highest priority and level 3 has the lowest.
12.2
Memory select configuration for MCUs with separate
program and data spaces
The 8031 and compatible family of MCUs, which includes the 80C51, 80C151, 80C251, and
80C51XA, have separate address spaces for program memory (selected using Program
Select Enable (PSEN, CNTL2)) and data memory (selected using Read Strobe (RD,
CNTL1)). Any of the memories within the PSD can reside in either space or both spaces.
This is controlled through manipulation of the VM register that resides in the CSIOP space.
The VM register is set using PSDsoft Express to have an initial value. It can subsequently
be changed by the MCU so that memory mapping can be changed on-the-fly.
For example, you may wish to have SRAM and primary Flash memory in the data space at
Boot-up, and secondary Flash memory in the program space at Boot-up, and later swap the
primary and secondary Flash memories. This is easily done with the VM register by using
相關(guān)PDF資料
PDF描述
PSD854F2A-90UT 256K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP64
PSH665-FREQ-OUT1 VCXO, SINE OUTPUT, 465 MHz - 865 MHz
PSM3-022K 1 ELEMENT, 0.022 uH, GENERAL PURPOSE INDUCTOR, SMD
PSM3-068K 1 ELEMENT, 0.068 uH, GENERAL PURPOSE INDUCTOR, SMD
PSM3-120K 1 ELEMENT, 0.12 uH, GENERAL PURPOSE INDUCTOR, SMD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSD854F2V-12JI 功能描述:CPLD - 復(fù)雜可編程邏輯器件 3.0V 2M 120ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類(lèi)型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD854F2V-12MI 功能描述:CPLD - 復(fù)雜可編程邏輯器件 3.0V 2M 120ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類(lèi)型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD854F2V-90J 功能描述:CPLD - 復(fù)雜可編程邏輯器件 3.0V 2M 90ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類(lèi)型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD854F2V-90M 功能描述:CPLD - 復(fù)雜可編程邏輯器件 3.0V 2M 90ns RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類(lèi)型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD-8M-01 制造商:Richco 功能描述:CB SPT REST MNT NAT 8MM SPC