參數(shù)資料
型號: PSD854F2A-90MT
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: 256K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP52
封裝: ROHS COMPLIANT, PLASTIC, QFP-52
文件頁數(shù): 53/128頁
文件大小: 1045K
代理商: PSD854F2A-90MT
Instructions
PSD8XXFX
Doc ID 7833 Rev 7
7
Instructions
An instruction consists of a sequence of specific operations. Each received byte is
sequentially decoded by the PSD and not executed as a standard WRITE operation. The
instruction is executed when the correct number of bytes are properly received and the time
between two consecutive bytes is shorter than the timeout period. Some instructions are
structured to include READ operations after the initial WRITE operations.
The instruction must be followed exactly. Any invalid combination of instruction bytes or
timeout between two consecutive bytes while addressing Flash memory resets the device
logic into READ mode (Flash memory is read like a ROM device).
The PSD supports the instructions summarized in Table 10:
Flash memory:
Erase memory by chip or sector
Suspend or resume sector erase
Program a Byte
Reset to READ mode
Read primary Flash Identifier value
Read Sector Protection Status
Bypass (on the PSD833F2, PSD834F2, PSD853F2 and PSD854F2)
These instructions are detailed in Table 10. For efficient decoding of the instructions, the first
two bytes of an instruction are the coded cycles and are followed by an instruction byte or
confirmation byte. The coded cycles consist of writing the data AAh to address X555h
during the first cycle and data 55h to address XAAAh during the second cycle. Address
signals A15-A12 are Don’t Care during the instruction WRITE cycles. However, the
appropriate Sector Select (FS0-FS7 or CSBOOT0-CSBOOT3) must be selected.
The primary and secondary Flash memories have the same instruction set (except for Read
Primary Flash Identifier). The Sector Select signals determine which Flash memory is to
receive and execute the instruction. The primary Flash memory is selected if any one of
Sector Select (FS0-FS7) is high, and the secondary Flash memory is selected if any one of
Sector Select (CSBOOT0-CSBOOT3) is high.
7.1
Power-up mode
The PSD internal logic is reset upon Power-up to the READ mode. Sector Select (FS0-FS7
and CSBOOT0-CSBOOT3) must be held low, and Write Strobe (WR, CNTL0) high, during
Power-up for maximum security of the data contents and to remove the possibility of a byte
being written on the first edge of Write Strobe (WR, CNTL0). Any WRITE cycle initiation is
locked when VCC is below VLKO.
7.2
READ
Under typical conditions, the MCU may read the primary Flash memory or the secondary
Flash memory using READ operations just as it would a ROM or RAM device. Alternately,
the MCU may use READ operations to obtain status information about a program or erase
相關(guān)PDF資料
PDF描述
PSD854F2A-90UT 256K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP64
PSH665-FREQ-OUT1 VCXO, SINE OUTPUT, 465 MHz - 865 MHz
PSM3-022K 1 ELEMENT, 0.022 uH, GENERAL PURPOSE INDUCTOR, SMD
PSM3-068K 1 ELEMENT, 0.068 uH, GENERAL PURPOSE INDUCTOR, SMD
PSM3-120K 1 ELEMENT, 0.12 uH, GENERAL PURPOSE INDUCTOR, SMD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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PSD854F2V-12MI 功能描述:CPLD - 復(fù)雜可編程邏輯器件 3.0V 2M 120ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD854F2V-90J 功能描述:CPLD - 復(fù)雜可編程邏輯器件 3.0V 2M 90ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD854F2V-90M 功能描述:CPLD - 復(fù)雜可編程邏輯器件 3.0V 2M 90ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD-8M-01 制造商:Richco 功能描述:CB SPT REST MNT NAT 8MM SPC