參數(shù)資料
型號： PCT1789N
英文描述： PCT303DL
中文描述： PCT303DL
文件頁數(shù)： 30/40頁
文件大?。?/td> 632K
代理商： PCT1789N
PC-TEL, Inc.
53
1789N0DOCDAT01A-0399
PCT1789N DATA SHEET
E
LECTRICAL
C
HARACTERISTICS
!
PRELIMINARY
PRELIMINARY
V
D
= 3.3V
Given values are: V
A
= charge pump; V
D
= +3.3 V ± 0.3 V; T
A
= 0 °C to 70 °C for K-grade, –40 °C to +85 °C for B-grade.
Table 21 303DL DC Characteristics, V
D
= +3.3V
Parameter
High-level input voltage
Symbol
V
IH
V
IL
V
OH
V
OL
I
L
I
A
I
D
Test Condition
Min
2.4
Typ
Max
Unit
V
Low-level input voltage
0.8
V
High-level output voltage
I
O
= –2mA
I
O
= +2mA
2.4
V
Low-level output voltage
0.35
V
Input leakage current
±10
μA
Power supply current, analog
a
a.
b.
Only a decoupling capacitor should be connected to V
A
when the charge pump is on.
All inputs at 0.4 or V
D
– 0.4 (CMOS levels). All inputs held static except clock and all outputs unloaded
(Static I
OUT
= 0 mA).
RGDT is not functional in this state.
The charge pump is recommended to be used only when VDD < 4.5V. When the charge pump is not used, V
A
should be applied to the device before V
D
is applied on power up if driven from separate supplies.
V
A
pin
V
D
pin
0.3
1
mA
Power supply current, digital
b
9
12
mA
Total supply current, sleep mode
b
1.2
2.5
mA
Total supply current, deep sleep
b,c
Power supply voltage, analog
a,d
c.
d.
0.5
mA
V
A
Charge pump on
4.5
4.6
4.7
V
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