參數(shù)資料
型號(hào)： MPC5125YVN400
廠商： Freescale Semiconductor
文件頁(yè)數(shù)： 38/94頁(yè)
文件大?。?/td> 0K
描述： IC MCU 32BIT E300 324TEPBGA
標(biāo)準(zhǔn)包裝： 60
系列： MPC51xx
核心處理器： e300
芯體尺寸： 32-位
速度： 400MHz
連通性： CAN，EBI/EMI，以太網(wǎng)，I²C，USB OTG
外圍設(shè)備： DMA，WDT
輸入/輸出數(shù)： 64
程序存儲(chǔ)器類(lèi)型： ROMless
RAM 容量： 32K x 8
電壓 - 電源 (Vcc/Vdd)： 1.08 V ~ 3.6 V
振蕩器型： 外部
工作溫度： -40°C ~ 125°C
封裝/外殼： 324-BBGA
包裝： 托盤(pán)
Electrical and Thermal Characteristics
MPC5125 Microcontroller Data Sheet, Rev. 4
Freescale Semiconductor
43
NOTE
The maximum power depends on the supply voltage, process corner, junction temperature,
and the concrete application and clock configurations.
4.1.6
Thermal Characteristics
4.1.6.1
Heat Dissipation
An estimation of the chip-junction temperature, TJ, can be obtained from the following equation:
TJ = TA+(RJA PD)
Eqn. 3
where:
TA = ambient temperature for the package (C)
RJA = junction to ambient thermal resistance (C/W)
PD = power dissipation in package (W)
3 Doze, Nap, and Sleep power are measured with the e300 core in Doze/Nap/Sleep mode; the system
oscillator, system PLL, and core PLL active; and all other system modules inactive.
4 Deep-sleep power is measured with the e300 core in Sleep mode. The system oscillator, system PLL, core
PLL, and other system modules are inactive.
5 PLL power is measured at AV
DD_SPLL = AVDD_CPLL = AVDD_OSC_TMPS = 3.3 V, TJ = 25 C.
6 Unloaded typical I/O power is measured at V
DD_IO = 3.3 V, VDD_MEM_IO = 1.8 V, TJ = 25 C.
Table 11. Thermal Resistance Data1
NOTES:
1 Thermal characteristics are targets based on simulation that are subject to change per device characterization.
Rating
Conditions
Sym Value Unit SpecID
Thermal resistance junction-to-ambient natural
convection2
2 Junction-to-Ambient thermal resistance determined per JEDEC JESD51-3 and JESD51-6. Thermal test board meets JEDEC
specification for this package.
Single layer board – 1s
RJA
35
°C/W
D6.1
Thermal resistance junction-to-ambient natural
convection2
Four layer board – 2s2p
RJA
25
°C/W
D6.2
Thermal resistance junction-to-moving-air ambient2
@ 200 ft./min., single layer board – 1s RJMA
29
°C/W
D6.3
Thermal resistance junction-to-moving-air ambient2
@ 200 ft./min., four layer board 2s2p
RJMA
22
°C/W
D6.4
Thermal resistance junction-to-board3
3 Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board meets JEDEC specification for
the specified package.
—RJB
16
°C/W
D6.5
Thermal resistance junction-to-case4
4 Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is used
for the case temperature. Reported value includes the thermal resistance of the interface layer.
—RJC
11
°C/W
D6.6
Junction-to-package-top natural convection5
5 Thermal characterization parameter indicating the temperature difference between the package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as
Psi-JT.
Natural convection
JT
3°C/W
D6.7
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