參數(shù)資料
型號(hào): KBE00S009M-D411
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2
文件頁(yè)數(shù): 84/86頁(yè)
文件大?。?/td> 1898K
代理商: KBE00S009M-D411
MCP MEMORY
84
KBE00S009M-D411
Revision 1.0
May 2005
0
1
2
3
4
5
6
0
10
CKE
CS
RAS
CAS
BA1
ADDR
WE
: Don’t care
CLOCK
Mode Register Set Cycle
Key
MRS
New Command
*NOTE:
MODE REGISTER SET CYCLE
1. CS, RAS, CAS, BA0, BA1 & WE activation at the same clock cycle with address key will set internal mode register.
2. Minimum 2 clock cycles should be met before new RAS activation.
3. Please refer to Mode Register Set table.
BA0
DQM
DQ
Ra
Auto Refresh
Auto Refresh Cycle
1
2
3
4
5
6
7
8
9
HIGH
HIGH
New Command
* All banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
*Note 2
*Note 1
*Note 3
t
ARFC
Hi-Z
Hi-Z
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