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| 型號(hào)： | KBE00S009M-D411 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| 中文描述： | 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2 |
| 文件頁(yè)數(shù)： | 50/86頁(yè) |
| 文件大?。?/td> | 1898K |
| 代理商： | KBE00S009M-D411 |
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MCP MEMORY
50
KBE00S009M-D411
Revision 1.0
May 2005
Register Programmed with Extended MRS
Address
BA1
BA0
A12 ~ A10/AP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
Mode Select
RFU
*1
DS
RFU
*1
PASR
Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT=0
BT=1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
1
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
Mode Select
0
1
0
4
4
1
1
Reserved
0
1
1
3
BA1 BA0
Mode
0
1
1
8
8
Write Burst Length
1
0
0
Reserved
0
0
Setting
for Nor-
mal MRS
1
0
0
Reserved
Reserved
A9
Length
1
0
1
Reserved
1
0
1
Reserved
Reserved
0
Burst
1
1
0
Reserved
1
1
0
Reserved
Reserved
1
Single Bit
1
1
1
Reserved
1
1
1
Full Page
Reserved
Register Programmed with Normal MRS
Address
BA0 ~ BA1
A12 ~ A10/AP
A9
*2
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
"0" Setting for
Normal MRS
RFU
*1
W.B.L
Test Mode
CAS Latency
BT
Burst Length
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
NOTES:
1.RFU(Reserved for future use) should stay "0" during MRS cycle.
2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Mode Select
Driver Strength
PASR
BA1
BA0
Mode
A6
A5
Driver Strength
A2
A1
A0
Size of Refreshed Area
0
0
Normal MRS
0
0
Full
0
0
0
Full Array
0
1
Reserved
0
1
1/2
0
0
1
1/2 of Full Array
1
0
EMRS for Mobile SDRAM
1
0
1/4
0
1
0
1/4 of Full Array
1
1
Reserved
1
1
1/8
0
1
1
Reserved
Reserved Address
1
0
0
Reserved
A12~A10/AP
A9
A8
A7
A4
A3
1
0
1
Reserved
0
0
0
0
0
0
1
1
0
Reserved
1
1
1
Reserved
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
Full Page Length x32 : 512Mb(512)
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