參數(shù)資料
型號: KBE00S009M-D411
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動SDRAM × 2
文件頁數(shù): 71/86頁
文件大?。?/td> 1898K
代理商: KBE00S009M-D411
MCP MEMORY
71
KBE00S009M-D411
Revision 1.0
May 2005
0
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CKE
CS
RAS
CAS
BA1
A10/AP
CL=3
ADDR
WE
: Don’t care
CLOCK
Read & Write Cycle at Same Bank @Burst Length=4, tRDL=2CLK
HIGH
Ra
Ca
Ra
CL=2
{
Row Active
(A-Bank)
Read
(A-Bank)
Write
(A-Bank)
Precharge
(A-Bank)
t
RC
*Note 1
t
SHZ
t
SAC
t
OH
*NOTE:
1. Minimum row cycle times is required to complete internal DRAM operation.
2. Row precharge can interrupt burst on any cycle. [CAS Latency - 1] number of valid output data
is available after Row precharge. Last valid output will be Hi-Z(t
SHZ
) after the clcok.
3. Ouput will be Hi-Z after the end of burst. (1, 2, 4, 8 & Full page bit burst)
BA0
DQM
DQ
t
RDL
*Note 2
*Note 4
t
SHZ
t
SAC
t
OH
t
RDL
*Note 4
Row Active
(A-Bank)
Precharge
(A-Bank)
t
RCD
Qa1
Db0
Qa0
Qa2
Db1
Db2
Db3
Qa3
Qa1
Db0
Qa0
Qa2
Db1
Db2
Db3
Qa3
Rb
Rb
Cb
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