參數(shù)資料
型號(hào): KBE00S009M-D411
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2
文件頁(yè)數(shù): 41/86頁(yè)
文件大?。?/td> 1898K
代理商: KBE00S009M-D411
MCP MEMORY
41
KBE00S009M-D411
Revision 1.0
May 2005
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.8V. WP pin provides hardware protection and is recommended to be kept at V
IL
during power-up and power-down. A recovery time of minimum 10
μ
s is required before internal circuit gets ready for any command
sequences as shown in Figure 22. The two step command sequence for program/erase provides additional software protection.
Figure 22. AC Waveforms for Power Transition
V
CC
WP
High
WE
Data Protection & Power-up sequence
~ 2.0V
~ 2.0V
10
μ
s
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