參數(shù)資料
型號: KBE00S009M-D411
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動SDRAM × 2
文件頁數(shù): 81/86頁
文件大?。?/td> 1898K
代理商: KBE00S009M-D411
MCP MEMORY
81
KBE00S009M-D411
Revision 1.0
May 2005
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CKE
CS
RAS
CAS
BA1
A10/AP
CL=3
ADDR
WE
: Don’t care
CLOCK
Burst Read Single bit Write Cycle @Burst Length=2
HIGH
RAa
CL=2
Row Active
(A-Bank)
*NOTE:
1. BRSW modes is enabled by setting A9 "High" at MRS (Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to "1" regardless of programmed burst length.
2. When BRSW write command with auto precharge is executed, keep it in mind that t
RAS
should not be violated.
Auto precharge is executed at the burst-end cycle, so in the case of BRSW write command,
the next cycle starts the precharge.
BA0
DQM
CAa
RCc
Precharge
(C-Bank)
DQ
{
RAa
Write
(A-Bank)
*Note 2
RBb
CAb
CBc
CCd
RBb
RCc
Row Active
(B-Bank)
Read with
Auto Precharge
(A-Bank)
Row Active
(C-Bank)
Write with
Auto Precharge
(B-Bank)
Read
(C-Bank)
DAa0
QAb0 QAb1
DBc0
QCd0 QCd1
DAa0
QAb0 QAb1
DBc0
QCd0 QCd1
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KBJ2501 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
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