參數(shù)資料
型號(hào): KBE00S009M-D411
廠(chǎng)商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2
文件頁(yè)數(shù): 83/86頁(yè)
文件大小: 1898K
代理商: KBE00S009M-D411
MCP MEMORY
83
KBE00S009M-D411
Revision 1.0
May 2005
0
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CKE
CS
RAS
CAS
A10/AP
ADDR
WE
: Don’t care
CLOCK
Self Refresh Entry & Exit Cycle
Self Refresh Entry
*NOTE:
TO ENTER SELF REFRESH MODE
1. CS, RAS & CAS with CKE should be low at the same clcok cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE.
3. The device remains in self refresh mode as long as CKE stays "Low".
cf.) Once the device enters self refresh mode, minimum t
RAS
is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CS starts from high.
6. Minimum t
SRFX
is required after CKE going high to complete self refresh exit.
7. 4K cycle(64Mb ,128Mb) or 8K cycle(256Mb, 512Mb) of burst auto refresh is required before self refresh entry and
after self refresh exit if the system uses burst refresh.
BA0,BA1
DQM
DQ
*Note 1
*Note 4
t
SS
*Note 3
t
SRFX
*Note 2
*Note 6
Self Refresh Exit
Auto Refresh
Hi-Z
Hi-Z
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