參數(shù)資料
型號(hào): HB52F169E1
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊(cè)SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 34/57頁(yè)
文件大小: 870K
代理商: HB52F169E1
HB52F169E1-75F
34
CE Latency = 4, Burst Length = full page
Burst stop command at burst write:
The burst stop command (BST command) is used to stop data input
during a full-page burst write. No data is written in the same clock as the BST command, and in subsequent
clocks. In addition, the BST command is only valid during full-page burst mode, and is illegal with burst
lengths of 1, 2, 4 and 8. And an interval of t
DPL
is required between last data-in and the next precharge com-
mand.
Burst Length = full page
Command Intervals
Read command to Read command interval:
1. Same bank, same ROW address:
When another read command is executed at the same ROW address
of the same bank as the preceding read command execution, the second read can be performed after an inter-
val of no less than 1 clock. Even when the first command is a burst read that is not yet finished, the data read
by the second command will be valid.
lBSR
clocks
CK
Command
Dout
out
out
out
out
lBSH
clocks
BST
out
out
out
out
t
CK
Command
Din
in
DPL
in
PRE/PALL
BST
I BSW
in
相關(guān)PDF資料
PDF描述
HB52F649E1 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
HB52F649E1 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
HB52F88EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F168EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
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