參數(shù)資料
型號(hào): HB52F169E1
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊(cè)SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 31/57頁(yè)
文件大?。?/td> 870K
代理商: HB52F169E1
HB52F169E1-75F
31
2. Single write:
A single write operation is enabled by setting OPCODE (A9, A8) to (1, 0). In a single write
operation, data is only written to the column address and the bank select address (BA) specified by the write
command set cycle without regard to the burst length setting. (The latency of data input is 1 clock).
Auto Precharge
Read with auto-precharge:
In this operation, since precharge is automatically performed after completing
a read operation, a precharge command need not be executed after each read operation. The command exe-
cuted for the same bank after the execution of this command must be the bank active (ACTV) command. In
addition, an interval defined by l
APR
is required before execution of the next command.
CE latency
4
3
Precharge start cycle
2 cycle before the final data is output
1 cycle before the final data is output
WRIT
CK
Command
Din
ACTV
Row
Column
in 0
in 6
in 7
in 8
Address
in 1
in 4
in 5
in 3
BL = 1
in 6
in 7
in 4
in 5
in 0-1
in 0
in 1
BL = 2
BL = 4
BL = 8
BL = full page
t
RCD
in 0
in 0
in 0
in 0
in 1
in 1
in 1
in 2
in 2
in 2
in 3
in 3
CE
Latency = 3, 4
WRIT
CK
Command
Din
ACTV
Row
Column
in 0
Address
t
RCD
相關(guān)PDF資料
PDF描述
HB52F649E1 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
HB52F649E1 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
HB52F88EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F168EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
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