參數(shù)資料
型號: HB52F169E1
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 26/57頁
文件大小: 870K
代理商: HB52F169E1
HB52F169E1-75F
26
From WRITE state, command operation
To [DESL], [NOP]:
These commands continue write operations until the burst operation is completed.
To [BST]:
This command stops a full-page burst.
To [READ], [READ A]:
These commands stop a burst and start a read cycle.
To [WRIT], [WRIT A]:
These commands stop a burst and start the next write cycle.
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
To [PRE], [PALL]:
These commands stop burst write and the SDRAM module then enters precharge mode.
From WRITE with AUTO-PRECHARGE state, command operation
To [DESL], [NOP]:
These commands continue write operations until the burst is completed, and the
SDRAM module enters precharge mode.
To [ACTV]:
This command makes the other bank active. (However, an interval of t
RRD
is required.) At-
tempting to make the currently active bank active results in an illegal command.
From REFRESH state, command operation
To [DESL], [NOP], [BST]:
After an auto-refresh cycle (after t
RC
), the SDRAM module automatically enters
the IDLE state.
相關(guān)PDF資料
PDF描述
HB52F649E1 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
HB52F649E1 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
HB52F88EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F168EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
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