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| 型號： | HB52F169E1 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM) |
| 中文描述： | 128 MB的注冊SDRAM的內(nèi)存（128 MB的寄存同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 24/57頁 |
| 文件大小： | 870K |
| 代理商： | HB52F169E1 |
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HB52F169E1-75F
24
Notes:
1.H: V
IH
. L: V
IL
.
×
: V
IH
or V
IL
.
The other combinations are inhibit.
2.An interval of t
DPL
is required between the final valid data input and the precharge command.
3.If t
RRD
is not satisfied, this operation is illegal.
4.Illegal for same bank, except for another bank.
5.Illegal for all banks.
6.NOP for same bank, except for another bank.
From PRECHARGE state, command operation
To [DESL], [NOP] or [BST]:
When these commands are executed, the SDRAM module enters the IDLE
state after t
RP
has elapsed from the completion of precharge.
Current state
Write
S
H
L
L
L
L
L
RE
×
H
H
H
H
L
CE
×
H
H
L
L
H
W
×
H
L
H
L
H
Address
×
×
×
BA, CA, A10 READ/READ A Term burst and New read
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
Command
DESL
NOP
BST
Operation
Continue burst to end
Continue burst to end
Burst stop on full page
Term burst and New write
Other bank active
ILLEGAL on same bank*
3
Term burst write and
Precharge*
2
ILLEGAL
ILLEGAL
Continue burst to end and
precharge
Continue burst to end and
precharge
ILLEGAL
L
L
H
L
BA, A10
PRE, PALL
L
L
H
L
L
×
L
L
×
H
L
×
×
MODE
×
REF, SELF
MRS
DESL
Write with auto-
precharge
L
H
H
H
×
NOP
L
L
L
L
H
H
H
L
H
L
L
H
L
H
L
H
×
BA, CA, A10 READ/READ A ILLEGAL*
4
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
BST
ILLEGAL*
4
Other bank active
ILLEGAL on same bank*
3
ILLEGAL*
4
ILLEGAL
ILLEGAL
Enter IDLE after t
RC
Enter IDLE after t
RC
Enter IDLE after t
RC
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
×
H
H
H
H
L
L
L
L
H
L
L
×
H
H
L
L
H
H
L
L
L
H
L
×
H
L
H
L
H
L
H
L
BA, A10
×
MODE
×
×
×
BA, CA, A10 READ/READ A ILLEGAL*
5
BA, CA, A10 WRIT/WRIT A
BA, RA
ACTV
BA, A10
PRE, PALL
×
REF, SELF
MODE
MRS
PRE, PALL
REF, SELF
MRS
DESL
NOP
BST
Refresh
(auto-refresh)
ILLEGAL*
5
ILLEGAL*
5
ILLEGAL*
5
ILLEGAL
ILLEGAL
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