參數(shù)資料
型號(hào): HB52F169E1
廠商: Hitachi,Ltd.
英文描述: 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
中文描述: 128 MB的注冊(cè)SDRAM的內(nèi)存(128 MB的寄存同步的DRAM內(nèi)存)
文件頁數(shù): 33/57頁
文件大?。?/td> 870K
代理商: HB52F169E1
HB52F169E1-75F
33
Single Write
Full-page Burst Stop
Burst stop command during burst read:
The burst stop (BST) command is used to stop data output during
a full-page burst. The BST command sets the output buffer to High-Z and stops the full-page burst read. The
timing from command input to the last data changes depending on the CE latency setting. In addition, the
BST command is valid only during full-page burst mode, and is illegal with burst lengths 1, 2, 4 and 8.
CE Latency = 3, Burst Length = full page
CE latency
3
4
BST to valid data
2
3
BST to high impedance
3
4
CK
Command
Din
l
APW
I
RAS
ACTV
WRIT A
in
ACTV
Note: Internal auto-precharge starts at the timing indicated by " ".
and an interval of t
RAS
(l
RAS
) is required between previous active (ACTV) command
and internal precharge " ".
l = 2 clocks
CK
Command
Dout
out
out
out
out
l = 3 clocks
BST
out
out
out
相關(guān)PDF資料
PDF描述
HB52F649E1 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM
HB52F649E1 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM)
HB52F88EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52F168EN 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
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