參數(shù)資料
型號(hào)： K4H561638D-GLB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DIODE ZENER SINGLE 200mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-323 3K/REEL
中文描述： 的DDR 256Mb的
文件頁(yè)數(shù)： 11/18頁(yè)
文件大?。?/td> 168K
代理商： K4H561638D-GLB0
DDR SDRAM
DDR SDRAM 256Mb D-die (x8, x16)
Rev. 1.1 Feb. 2003
DDR SDRAM I
DD
spec table
(V
DD
=2.7V, T = 10
°
C)
Symbol
32Mx8
16Mx16
Unit
Notes
- CC(DDR400@CL=3) - C4(DDR400@CL=3) - CC(DDR400@CL=3) - C4(DDR400@CL=3)
105
100
130
130
4
4
30
30
25
25
55
55
75
75
185
185
220
220
200
200
3
3
1.5
1.5
350
350
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
110
150
4
30
25
55
75
220
250
200
3
1.5
380
105
145
4
30
25
55
75
220
250
200
3
1.5
380
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD6
Normal
Low power
IDD7A
Optional
< Detailed test conditions for DDR SDRAM IDD1 & IDD7A >
IDD1 : Operating current: One bank operation
1. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs change logic state once per Deselect cycle.
Iout = 0mA
2. Timing patterns
- CC/C4(200Mhz,CL=3) : tCK=5ns, CL=3, BL=4, tRCD=3*tCK(CC) 4*tCK(C4), tRC=11*tCK(CC) 12*tCK(C4), tRAS=8*tCK
Setup : A0 N N R0 N N N N P0 N N
Read : A0 N N R0 N N N N P0 N N - repeat the same timing with random address changing
*50% of data changing at every transfer
IDD7A : Operating current: Four bank operation
1. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on Deselet edge are not changing.
Iout = 1mA
2. Timing patterns
- CC/C4(200Mhz,CL=3) : tCK=5ns, CL=3, BL=4, tRCD=3*tCK(CC) 4*tCK(C4), tRC=11*tCK(CC) 12*tCK(C4), tRAS=8*tCK
Setup : A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 N N
Read : A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 N N - repeat the same timing with random address changing
*50% of data changing at every transfer
Legend : A = Activate, R=Read, W=Write, P=Precharge, N=NOP
相關(guān)PDF資料
PDF描述
K4H561638D-GLB3 DIODE ZENER SINGLE 200mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-323 3K/REEL
K4H560438D-GC DDR 256Mb
K4H560438D-GCA2 DDR 256Mb
K4H560438D-GCB0 DDR 256Mb
K4H560438D-GCB3 DDR 256Mb
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H561638D-GLB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb
K4H561638D-TC/LA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb
K4H561638D-TC/LA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb
K4H561638D-TC/LB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb
K4H561638D-TC/LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*