參數(shù)資料
型號: K4H561638E-TLA0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類: 串行ADC
英文描述: 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-SOIC
中文描述: 128MB DDR SDRAM的
文件頁數(shù): 18/18頁
文件大?。?/td> 168K
代理商: K4H561638E-TLA0
DDR SDRAM
DDR SDRAM 256Mb D-die (x8, x16)
Rev. 1.1 Feb. 2003
j. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC ~ AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
k. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotonic.
相關PDF資料
PDF描述
K4H561638E-TLA2 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-SOIC
K4H561638E-TLB0 128Mb DDR SDRAM
K4H561638F-TCC4 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-SOIC
K4H561638F-TCCC 256Mb F-die DDR400 SDRAM Specification
K4H561638M-TCA2 128Mb DDR SDRAM
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