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參數(shù)資料
| 型號： | K4H560438D-GCB3 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR 256Mb |
| 中文描述： | 的DDR 256Mb的 |
| 文件頁數(shù)： | 7/26頁 |
| 文件大?。?/td> | 291K |
| 代理商： | K4H560438D-GCB3 |
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- 7 -
256Mb
DDR SDRAM
Rev. 2.2 Mar. ’03
Input/Output Function Description
SYMBOL
TYPE
DESCRIPTION
CK, CK
Input
Clock : CK and CK are differential clock inputs. All address and control input signals are sam-
pled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to
both edges of CK. Internal clock signals are derived from CK/CK.
CKE
Input
Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Deactivating the clock provides PRECHARGE
POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN
(row ACTIVE in any bank). CKE is synchronous for all functions except for disabling outputs,
which is achieved asynchronously. Input buffers, excluding CK, CK and CKE are disabled
during power-down and self refresh modes, providing low standby power. CKE will recognize
an LVCMOS LOW level prior to VREF being stable on power-up.
CS
Input
Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command
decoder. All commands are masked when CS is registered HIGH. CS provides for external
bank selection on systems with multiple banks. CS is considered part of the command code.
RAS, CAS, WE
Input
Command Inputs : RAS, CAS and WE (along with CS) define the command being entered.
LDM,(U)DM
Input
Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH along with that input data during a WRITE access. DM is sampled on both
edges of DQS. DM pins include dummy loading internally, to matches the DQ and DQS load-
ing. For the x16, LDM corresponds to the data on DQ0-DQ7 ; UDM correspons to the data on
DQ8-DQ15.
BA0, BA1
Input
Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRE-
CHARGE command is being applied.
A [n : 0]
Input
Address Inputs : Provide the row address for ACTIVE commands, and the column address
and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the
memory array in the respective bank. A10 is sampled during a PRECHARGE command to
determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10
HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address
inputs also provide the op-code during a MODE REGISTER SET command. BA0 and BA1
define which mode register is loaded during the MODE REGISTER SET command (MRS or
EMRS).
DQ
I/O
Data Input/Output : Data bus
LDQS,(U)DQS
I/O
Data Strobe : Output with read data, input with write data. Edge-aligned with read data, cen-
tered in write data. Used to capture write data. For the x16, LDQS corresponds to the data on
DQ0-DQ7 ; UDQS corresponds to the data on DQ8-DQ15.
NC
-
No Connect : No internal electrical connection is present.
V
DD
Q
Supply
DQ Power Supply : +2.5V
±
0.2V.
V
SS
Q
Supply
DQ Ground.
V
DD
Supply
Power Supply : +2.5V
±
0.2V (device specific).
V
SS
Supply
Ground.
V
REF
Input
SSTL_2 reference voltage.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560438D-GLA2 | DDR 256Mb |
| K4H560438E-ZLB0 | Connector Kit; Contents Of Kit:C14610F0240001 24 position bulkhead housing double latch, C14610B0241021 24 position female insert wire protect, Without spring cover; For Use With:C146 Heavy Duty Industrial Connectors RoHS Compliant: Yes |
| K4H560438E-ZLB3 | Connector Kit; Contents Of Kit:C14610G0245001 24 position hood PG 21 double latch low profile side entry, C14610A0241021 24 position male insert wire protect, VN162100014 PG 21 gland bushing, For 0.433" - 0.866" diameter cable RoHS Compliant: Yes |
| K4H560438E-ZLA2 | Rectangular Industrial Connector Housing; Series:C-146; No. of Contacts:6; Gender:Female; Body Material:Aluminum Alloy; Connecting Termination:Screw; Features:Spring Cover; For Use With:C146 Rectangular Circular Connectors RoHS Compliant: Yes |
| K4H560438E-ZCB0 | CSM, CER 103PF 1000V 10% 1210 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560438D-GLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb |
| K4H560438D-GLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb |
| K4H560438D-GLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb |
| K4H560438D-NC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
| K4H560438D-NC/LA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb sTSOPII |
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