參數(shù)資料
型號(hào)： Celeron Processor with mobile
廠商： Intel Corp.
英文描述： Celeron Processor Mobile Module MMC-1 at 400 MHz, 366 MHz, 333 MHz, and 300 MHz(工作頻率400,366,333,300和266兆赫茲帶移動(dòng)模塊和連接器1處理器)
中文描述： 賽揚(yáng)處理器的移動(dòng)模塊絲裂霉素在400兆赫，366兆赫，333兆赫和300兆赫1（工作頻率四千〇三億六千六百三十三萬(wàn)三千三百和266兆赫茲帶移動(dòng)模塊和連接器1處理器）
文件頁(yè)數(shù)： 32/42頁(yè)
文件大小： 449K
代理商： CELERON PROCESSOR WITH MOBILE
32
Intel
a
Celeron
Processor Mobile Module MMC-1
At 400 MHz, 366 MHz, 333 MHz, and 300 MHz
NOTE:
Values shown are for
reference only
.
Figure 8. Overcurrent Protection Circuit
4.7.4.1
In Figure 8, PWR is the voltage generated by applying the
AC Adaptor or Battery. M1 is a low R
(on) P-Channel
MOSFET such as a Siliconix* SI4435DY. When the voltage-
On PWR is applied and increased to over 4.75 volts, the
Slew-rate Control: Circuit Description
UNDER_VOLTAGE_LOCKOUT circuit allows R4 to pull up
the gate of M3 to start a turn-on sequence. M3 pulls its drain
toward ground, forcing current to flow through R2. M1 will
not start to source any current until after t_delay with t_delay
defined as:
t_delay
R.
Vt
Vgs_max
Vpwr
Vgs_max
.
R16
R16 R2
Vpwr
The manufacturer’s Vgs_max specification of 20 volts must
never be exceeded. However, Vgs_max must be high
enough to keep the RDS (On) of the device as low as
possible. After the initial t_delay, M1 will begin to source
current and V_DC will start to ramp up. The ramp up time,
t_ramp, is defined as:
t_ramp
R.
Vsat
Vgs_max
t_delay
Maximum current during the voltage ramping is:
I
.
CtotalVpwr
t_ramp
As shown in the circuit in Figure 8: t_delay = 5.53 ms; t_tran = 14.0 ms; and I_max = 146 mA.
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