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參數(shù)資料
| 型號(hào)： | CEM11C2 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | Dual Enhancement Mode Field Effect Transistor (N and P Channel) |
| 中文描述： | 雙增強(qiáng)模式場效應(yīng)晶體管（N和P溝道） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 59K |
| 代理商： | CEM11C2 |
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
FEATURES
30V ,7A , R
DS(ON)
=30m
R
DS(ON)
=42m
-20V , -4.3A , R
DS(ON)
=90m
@V
GS
=10V.
@V
GS
=4.5V.
@V
GS
=-4.5V.
@V
GS
=-2.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
V
Drain Current-Continuous @T
J
=125 C
-Pulsed
I
D
2.0
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
62.5
/W
C
R
DS(ON)
=120m
CEM11C2
a
a
a
b
30
7
30
2.3
-20
4.3
17
-4.3
1
S
1
2
G
1
3
4
8
7
6
5
S
2
G
2
D
1
D
1
D
2
D
2
SO-8
1
Jul. 2002
20
5-148
8
5
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|---|---|
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