參數(shù)資料
型號: WED3DL3216V8BC
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA119
封裝: 17 X 23 MM, MO-163, BGA-119
文件頁數(shù): 6/27頁
文件大小: 989K
代理商: WED3DL3216V8BC
14
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WED3DL3216V
November, 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
READ & WRITE CYCLE AT SAME BANK @ BURST LENGTH = 4
NOTES:
1.
Minimum row cycle times are required to complete internal DRAM operation.
2.
Row precharge can interrupt burst on any cycle. (CAS# Latency - 1) number of valid output data is available after Row precharge. Last valid output will be Hi-Z(tSHZ) after the
clock.
3.
Access time from Row active command. tCC *(tRCD + CAS# latency - 1) + tSAC.
4.
Output will be Hi-Z after the end of burst (1, 2, 4, 8 & full page bit burst).
CLOCK
CKE
CE#
RAS#
CAS#
ADDR
BA
A10/AP
CL = 2
WE#
DQM
01
2
3
4
56
78
9
10
11
12
13
14
15
16
17
18
19
DON’T CARE
Row Active
(A-Bank)
Precharge
(All Banks)
DQ
CL = 3
Precharge
(All Banks)
Row Active
(A-Bank)
Precharge
(A-Bank)
Precharge
(A-Bank)
Write
(A-bank)
Read
(A-bank)
HIGH
Note 1
tRC
Note 2
tRCD
Ra
Ca0
Rb
Cb0
Ra
tRAC
Note 3
tSAC
tOH
Qa0
tRAC
Note 3
tSAC
tOH
Qa1
Qa2
Qa3
Qa0
Qa1
Qa2
Qa3
tSHZ Note 4
Rb
Db0
Db3
Db2
Db1
Db0
Db3
Db2
Db1
tRDL
相關(guān)PDF資料
PDF描述
WEDPF2M64B-120BC3 2M X 64 FLASH 3.3V PROM MODULE, 120 ns, PBGA119
WS57C45-35T 2K X 8 UVPROM, 15 ns, CDIP24
W25Q64BVZEIP 8M X 8 SPI BUS SERIAL EEPROM, PDSO8
W3DG634V7D2 4M X 64 SYNCHRONOUS DRAM MODULE, DMA168
WPF512K8C70TFI5 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WED3DL3216V8BI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:16Mx32 SDRAM
WED3DL3216V-BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM MCP
WED3DL324V10BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SDRAM
WED3DL324V8BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 SDRAM
WED3DL324V-BC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM MCP